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provide an conservative and aggressive STTRAM cell. Adjust bank ratio…

… constraints
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cxxz committed Aug 22, 2014
1 parent 7438330 commit 6e3d070e88441e277f715133617c403894ec9867
Showing with 38 additions and 50 deletions.
  1. +1 −1 constant.h
  2. +3 −3 sample_STTRAM_macro.cfg → sample_NVM_macro.cfg
  3. +0 −34 sample_RRAM.cfg
  4. +12 −12 sample_STTRAM.cell
  5. +22 −0 sample_STTRAM_aggressive.cell
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@@ -96,7 +96,7 @@
#define RES_ADJ 8.6
#define VOL_SWING .1
#define CONSTRAINT_ASPECT_RATIO_BANK 3
#define CONSTRAINT_ASPECT_RATIO_BANK 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10
#define BITLINE_LEAKAGE_TOLERANCE 1
#define IR_DROP_TOLERANCE 0.2
@@ -1,6 +1,4 @@
# This STTRAM sample configuration is similar to the design in the following paper
# A 45nm 1Mb Embedded STT-MRAM with design techniques to minimize read-disturbance
# Symposium on VLSI Circuits, 2012
# This is a sample configuration for generic NVM prototype
-DesignTarget: RAM
@@ -23,6 +21,8 @@
-InternalSensing: true
-MemoryCellInputFile: sample_STTRAM.cell
//-MemoryCellInputFile: sample_RRAM.cell
//-MemoryCellInputFile: sample_STTRAM_aggressive.cell
-Temperature (K): 350
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@@ -1,22 +1,22 @@
//CELL FILE.. WRITE PULSE: 5ns CURRENT: 40.82uA TRANSISTOR WIDTH: 8.5
-MemCellType: MRAM
-CellArea (F^2): 57.5
-CellAspectRatio: 0.57
-ResistanceOn (ohm): 6000
-ResistanceOff (ohm): 12000
-CellArea (F^2): 54
-CellAspectRatio: 0.54
-ResistanceOn (ohm): 3000
-ResistanceOff (ohm): 6000
-ReadMode: current
-ReadVoltage (V): 0.25
-MinSenseVoltage (mV): 25
-ReadPower (uW): 23.4
-ReadPower (uW): 30
-ResetMode: current
-ResetCurrent (uA): 40.82
-ResetPulse (ns): 5
-ResetEnergy (pJ): 0.252
-ResetCurrent (uA): 80
-ResetPulse (ns): 10
-ResetEnergy (pJ): 1
-SetMode: current
-SetCurrent (uA): 40.82
-SetPulse (ns): 5
-SetEnergy (pJ): 0.252
-SetCurrent (uA): 80
-SetPulse (ns): 10
-SetEnergy (pJ): 1
-AccessType: CMOS
-VoltageDropAccessDevice (V): 0.15
-AccessCMOSWidth (F): 8.5
-AccessCMOSWidth (F): 8
@@ -0,0 +1,22 @@
//THIS IS AN AGGRESSIVE STTRAM CELL FABRICATED IN OUR COLLABRATIVE LAB
-MemCellType: MRAM
-CellArea (F^2): 34.5
-CellAspectRatio: 0.96
-ResistanceOn (ohm): 6000
-ResistanceOff (ohm): 12000
-ReadMode: current
-ReadVoltage (V): 0.25
-MinSenseVoltage (mV): 25
-ReadPower (uW): 23.4
-ResetMode: current
-ResetCurrent (uA): 40.82
-ResetPulse (ns): 5
-ResetEnergy (pJ): 0.252
-SetMode: current
-SetCurrent (uA): 40.82
-SetPulse (ns): 5
-SetEnergy (pJ): 0.252
-AccessType: CMOS
-VoltageDropAccessDevice (V): 0.15
-AccessCMOSWidth (F): 4.5

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