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rjh.bib
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rjh.bib
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@inproceedings{Hsuan2013,
abstract = {Spectroscopic Ellipsometry (SE) is a commonly used nondestructive method to perform in-line monitoring of film thicknesses and optical indexes for the semiconductor industry. SE metrology can also monitor film composition by correlating optical indexes to species concentration. Germanium concentration (Ge{\%}) measurement after SiGe epitaxial layer is a critical application at 40/28nm nodes to evaluate strain induced in the PMOS channel;. however, for 28nm and beyond, metrology needs to monitor Ge{\%} on more complex SiGe film processes. This paper describes accurate and stable Ge{\%} measurement on multi-SiGe layers by using optimized optical models and multiple correlation methodologies using SE metrology and how SiGe and Si-cap thicknesses can be reported simultaneously and independently. This paper demonstrates how to create enhanced SiGe m odels using KLA-Tencor Off-Line Spectral Analysis software based on DoE wafers with wide range split. Five different Ge{\%} conditions are considered and multiple correlations created to report Ge{\%} with less than 1{\%} absolute offset to XRD reference tool. The final measured result also shows excellent Ge{\%} stability (STDEV ∼ 0.13{\%}) even when multi-SiGe thicknesses are changed. {\textcopyright} The Electrochemical Society.},
author = {Hsuan, T.-C. and Hu, Y.-C. and Hsu, M.C. and Zhan, D.-Z. and Yu, S. and Chien, C.-C. and Chang, S.-J.J. and Chiu, S.-M.S. and Huang, C.-J.E. and Cheng, C.-Y.H. and Cheng, J. and Raphael, G. and Jiang, Z. and Carlos, Y. and Tan, Z. and Hoobler, R.},
booktitle = {ECS Transactions},
doi = {10.1149/05807.0137ecst},
issn = {19386737},
number = {7},
title = {{Advanced spectra ellipsometry application for multi-layers sige at 28nm Node and Beyond}},
volume = {58},
year = {2013}
}
@article{Hoobler1993,
abstract = {The reaction between Cr(CO) 6 and Na(C 5 Ph 5 ) in refluxing diglyme yields tNa(diglyme) 3/2 ][(C 5 Ph 5 )Cr(CO) 3 ], 1. Metathesis of 1 with [Ph 3 PNPPh 3 ]Cl in CH 2 C1 2 yields [Ph 3 PNPPh 3 ] [(C 5 Ph 5 )Cr(CO) 3 ], 2. Oxidation of 1 by AgBF 4 in cold THF under an argon atmosphere produces (C 5 Ph 5 )Cr(CO) 3 , 3. Complexes 2 and 3 form a redox pair connected by a quasireversible one-electron process, E° = −0.69 V vs ferrocene in CH 2 Cl 2 , E° = −0.50 V in CH3CN, k s = 0.12 cm/s. ESR spectra of 3 in toluene at 90 K gave a rhombic g-tensor with components 2.1366, 2.0224, and 1.9953, consistent with the expected low-spin d 5 electronic configuration. The largest g-tensor component was significantly temperature dependent, suggesting an equilibrium between conformations with 2 A′ and 2 A″ ground states. Crystals of 2 belong to the space group P1̅ with Z = 2. The unit-cell parameters are a = 12.190 (3) {\AA}, b = 13.019 (3) {\AA}, c = 19.842 (4) {\AA}, $\alpha$ = 96.598 (17)°, $\beta$ = 103.719 (17)°, $\gamma$ = 94.322 (18)°, and V = 3021.5 (11) {\AA} 3 with final values of R F = 6.72{\%} and R wF = 7.57{\%}. Crystals of 3{\textperiodcentered}C 6 H 6 belong to the space group P2 1 /c with Z = 8. The unit-cell parameters are a = 33.307 (9) {\AA}, b = 8.978 (3) {\AA}, c = 22.702 (6) {\AA}, $\beta$ = 91.73 (2)°, and V = 6798 (3) {\AA} 3 with final values of R F = 7.69{\%} and R wF = 7.68{\%}. {\textcopyright} 1993, American Chemical Society. All rights reserved.},
author = {Hoobler, Ray J. and Hutton, Marc A. and Dillard, Mills M. and Castellani, Michael P. and Rheingold, Arnold L. and Rieger, Anne L. and Rieger, Philip H. and Richards, Thomas C. and Geiger, William E.},
doi = {10.1021/om00025a023},
isbn = {0276-7333},
issn = {0276-7333},
journal = {Organometallics},
number = {1},
pages = {116--123},
title = {{Synthesis, characterization, and crystal structure of the chromium complex (.eta.5-C5Ph5)Cr(CO)3 radical}},
url = {http://pubs.acs.org/doi/abs/10.1021/om00025a023},
volume = {12},
year = {1993}
}
@article{Hoobler1991,
abstract = {Reaction of [Ru(p-cymene)Cl 2 ] 2 with K($\eta$ 5 -C 5 HPh 4 ) in refluxing diglyme yields ($\eta$ 5 -C 5 Ph 4 ) 2 Ru in ca 50{\%} yield. The complex was not susceptible to oxidation or reduction. (C 5 HPH 4 ) 2 Ru crystallizes in the triclinic P1 space group with a = 8.549(4), b = 10.793(4), c = 12.842(5) {\AA}, $\alpha$ = 65.98(3), $\beta$ = 73.10(3), $\gamma$ = 83.49(3)° and Z = 1. The least-squares data refined to R(F) = 3.53{\%} and R(wF = 3.82{\%} for the 3952 independent observed reflections with F o ≥ 5$\sigma$(F o ). The metal-centroid distance is 1.832(2) {\AA} and all other bond lengths and angles are similar to other octaphenylmetallocenes. 1 H NMR analysis employing 2D J-resolved, COSY and low temperature techniques allowed assignment of all protons in the molecule. The motional processes of the phenyl groups are discussed. {\textcopyright} 1991.},
author = {Hoobler, R.J. and Adams, J.V. and Hutton, M.A. and Francisco, T.W. and Haggerty, B.S. and Rheingold, A.L. and Castellani, M.P.},
doi = {10.1016/0022-328X(91)86051-Q},
issn = {0022328X},
journal = {Journal of Organometallic Chemistry},
number = {1-2},
title = {{Synthesis, molecular structure, and {\textless}sup{\textgreater}1{\textless}/sup{\textgreater}H NMR analysis of bis(tetraphenylcyclopentadienyl)rutherium(II)}},
volume = {412},
year = {1991}
}
@inproceedings{Dusa2004,
abstract = {Current advanced lithography processes are based on a Critical Dimension (CD) budget of 10nm or less with errors caused by exposure tool, wafer substrate, wafer process, and reticle. As such, allowable CD variation across wafer becomes an important parameter to understand, control and minimize. Three sources of errors have an effect on CD Uniformity (CDU) budget, run-to-run (R2R), wafer-to-wafer (W2W) and intra-wafer. While R2R and W2W components are characterized and compensation control techniques were developed to minimize their contribution [1] the intra-wafer component is more or less ignored with the consequence that its sources of errors have not been characterized and no compensation technique is available. In this paper, we propose an approach to analyze intra-wafer CD sources of variations identifying the non-random CDU behavior and connect this with disturbances caused by processing errors described by their wafer spatial coordinates. We defined a process error as disturbance and its effect as a feature response. We study the impact of modeling spatial distribution of a feature response as calculated by diffractive optical CD metrology (scatterometry) and relate it to a programmed process disturbance. Process disturbances are classified in terms of time characteristics that define their spatial distribution. We demonstrated feature response to a disturbance behavior as statistical values as well as spatial profile. We identified that CD response is not sufficient to determine the sources of process disturbance and accordingly added responses from other features, which add to detection of CDU sources of error. The added responses came from scatterometry principle based on model definition of a litho pattern described by its shape with characteristic features: bottom CD, resist thickness, sidewall angle and bottom antireflective layer thickness. Our results show that process errors with continuous intra-wafer variation, such as PEB and BARC thickness have larger effects on CDU compared to process errors with discrete intra-wafer behavior, such as dose and defocus. Correlation between multiple feature responses to process disturbance was characterized as spatial covariance between CD to resist thickness and CD to SWA. Spatial feature covariance enhances capability to infer sources of process disturbance from metrology data.},
author = {Dusa, Mircea and Moerman, Richard and Singh, Bhanwar and Friedberg, Paul and Hoobler, Ray and Zavecs, Terry},
booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
doi = {10.1117/12.543786},
editor = {{Tobin, Jr.}, Kenneth W.},
issn = {0277786X},
keywords = {CDU,Diffractive OCD,Feature response,Process disturbances,SWA,Spatial covariance,Spatial distribution},
month = {apr},
pages = {93},
title = {{Intra-wafer CDU characterization to determine process and focus contributions based on scatterometry metrology}},
url = {http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.543786},
volume = {5378},
year = {2004}
}
@article{Ballard1994,
abstract = {The nonresonant multiphoton excitation spectrum of the lithium atom as detected by laser induced fluorescence (LIF) was presented. The multiphoton excitation spectrum was performed out on a sample of Li. It was readily evident that transitions originating from the excited 2 2 P states were observed throughout the spectrum in addition to transitions from the ground 2 2 S state. Both two- and three-photon transitions from 2 2 S and 2 2 P were noted, ensuing in four different transition series. Laser power dependence of the fluorescence intensity was also measured for various transitions. Moreover, the multiphoton excitation processes were verified by observing the effects of circular laser polarization on the excitation intensities.},
author = {Ballard, M K and Hoobler, R J and He, Chun and Gold, L P and Bernheim, R A and Bicchi, P.},
issn = {00084204},
journal = {Canadian Journal of Physics},
number = {11-12},
pages = {808--811},
title = {{Multiphoton LIF in atomic LI-6}},
volume = {72},
year = {1994}
}
@article{Shivaprasad2003,
abstract = {The measurement of semi-isolated polysilicon gate structure was described using an optical critical dimension (OCD) technique. The OCD technique is nondestructive, has a fast turnaround time and is sensitive to sub-100 nm linewidths. Polysilicon gate grating structures with critical dimensions of 30 nm to 40 nm were measured for line to space ratios of 1:10 and 1:20. It was found that the repeatability on the polysilicon grating was less than 0.3 nm which show the high stability of the measurement on an isolated grating structure.},
author = {Shivaprasad, D. and Hu, J. and Tabet, M. and Hoobler, R. and Mui, D. and Liu, W.},
issn = {10711023},
journal = {Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures},
number = {6},
title = {{Measurement of semi-isolated polysilicon gate structure with the optical critical dimension technique}},
volume = {21},
year = {2003}
}
@inproceedings{Apak2004,
abstract = {Optical Critical Dimension (OCD) measurements using Normal-Incidence Spectroscopic Polarized Reflectance and Ellipsometry allows for the separation of transverse electric and transverse magnetic modes of light reflected from an anisotropic sample as found in a periodic grating structure. This can provide the means for determining line widths and analyzing complex profiles for a variety of structures found in mask fabrication. The normal-incidence methodology maintains much of the simplicity in mechanical design found in a standard reflectometer and the additional polarizing element has no effect on the footprint making the system amenable for integration, inline monitoring and advanced process control. The Rigorous Coupled Wave Analysis (RCWA) method provides an exact method for calculating the diffraction of electromagnetic waves by periodic grating structures. We have continued development of OCD technology to critical measurement steps in the photomask fabrication process: After Development Inspection (ADI), After Etch Inspection (AEI) for binary and phase shift masks. Additionally, we have demonstrated the ability of monitoring the mask CD quality with the presence of a protective pellicle. The determination of important critical dimensions in photomasks via optical techniques is appealing for several reasons: the method is non-destructive to photoresist and the sample is not subject to charging effects; the technique is capable of measuring the critical dimensions of grating structures down to approximately 40 nm; finally, minimal facilities are required for installation (no high vacuum, cooling or shielding of electromagnetic fields). Results will be presented showing the capabilities of OCD metrology for ADI, AEI and masks monitoring applications that emphasizes how the technology can be incorporated at many steps in the mask manufacturing process.},
author = {Apak, E. and Sarathy, T.P. and McGahan, W.A. and Rovira, P.I. and Hoobler, R.J.},
booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
doi = {10.1117/12.557809},
issn = {0277786X},
keywords = {ADI,AEI,Normal incidence spectroscopic ellipsometry,OCD,Scatterometry},
number = {PART 2},
title = {{Photomask ADI, AEI and QA measurements using normal incidence optical-CD metrology}},
volume = {5446},
year = {2004}
}
@article{Lee2000,
abstract = {A pulsed Lavai nozzle, low Mach number supersonic expansion kinetics apparatus has been constructed to study neutral-neutral kinetics by a rather general laser photolysis initiation and laser photoionization detection of the product species. This new apparatus permits laboratory studies of low temperature rate coefficients (e.g., 70-170 K) on condensable gases that have insufficient vapor pressures at low temperatures for conventional methods of kinetic measurements. The design considerations, the uniformity of the reaction zone over 10-20 cm, and the skimmer sampling of the pulsed Laval expansion are examined. The direct measurement of a rate coefficient at 90 K is also demonstrated using this new apparatus. {\textcopyright} 2000 American Institute of Physics.},
author = {Lee, S. and Hoobler, R.J. and Leone, S.R.},
issn = {00346748},
journal = {Review of Scientific Instruments},
number = {4},
title = {{A pulsed Lavai nozzle apparatus with laser ionization mass spectroscopy for direct measurements of rate coefficients at low temperatures with condensable gases}},
volume = {71},
year = {2000}
}
@article{Hoobler2002,
abstract = {In modeling the optical properties of thin films, incorporation of roughness or interfacial layers is often required in the analysis of spectroscopic ellipsometric and spectroscopic reflectance data in order to achieve good agreement between the model and experimental data. The location of the roughness or interracial layer is usually discernable from the spectroscopic ellipsometric data; however, their location is not always unambiguous from spectroscopic reflectance data. In the current work, we have explored how the spectroscopic determination of the interfacial and surface roughness layers correlates with direct measurements of the surface using atomic force microscopy (AFM). Spectroscopic reflectance and subsequent analysis of several thick films demonstrate the difficulty in placement of a roughness or interfacial layer in the optical model. The samples involved in this study have films deposited on metal substrates and include stainless steel and aluminum. We have used AFM to directly measure the surface roughness in order to improve the optical characterization and model development. As an example, we have examined an 8,000 mn silicon dioxide film on stainless steel. Models with the placement of an interfacial layer between the substrate and film, or placement of a roughness layer at the surface produce fits with nearly equivalent mean squared error values; however, the surface roughness layer is nearly an order of magnitude larger than that of the interfacial layer. Analysis using AFM shows a surface topography consistent with the magnitude of the interracial roughness layer. In this example, the silicon dioxide layer was too thick for standard spectroscopic ellipsometry and spectroscopic reflectance was used exclusively in the analysis. For several samples with silicon dioxide on an aluminum substrate, an interfacial layer was necessary to produce a good model fit with the experimental data. These films of 500-1,000 mn thickness were analyzed using both spectroscopic ellipsometry and spectroscopic reflectance. The analysis for all films shows good agreement between the interfacial roughnesses calculated using an effective medium approximation (EMA) with AFM measurements, indicating the transfer or correlation of the substrate roughness to the surface. {\textcopyright} 2002 SPIE {\textperiodcentered} 0277-786X/02/{\$}15.00.},
author = {Hoobler, R.J. and Korlahalli, R. and Boltich, E. and Serafin, J.},
doi = {10.1117/12.473520},
issn = {0277786X},
journal = {Proceedings of SPIE-The International Society for Optical Engineering},
keywords = {AFM,Ellipsometry,Interfacial layer,Reflectance,Roughness},
title = {{Characterization of interfacial layers and surface roughness using spectroscopic reflectance, spectroscopic ellipsometry and atomic force microscopy}},
volume = {4689 II},
year = {2002}
}
@article{Hoobler1997,
abstract = {Low-temperature rate coefficients for the reactions of C 2 H + RH → products (RH = C 3 H 8 , i-C 4 H 10 , n-C 4 H 10 , and neo-C 5 H 12 ) have been measured over the temperature range 154-361 K. Measurements were made using laser photolysis of C 2 H 2 to produce C 2 H. Transient infrared laser absorption decays of C 2 H are used to monitor the subsequent reaction in a transverse flow cell. The results show that the rate coefficients for the reactions of C 2 H with propane are independent of temperature while the rate coefficients for the reactions of C 2 H with isobutane, n-butane, and neopentane have a negative temperature dependence. Over the experimental temperature range, the rate constants for C 2 H + RH fit the following Arrhenius expressions: k propane = (7.8 ± 0.4) × exp[(3 ± 12)/T], k isobutane = (8.7 ± 0.8) × 10 -11 exp[(28 ± 21)/T], k n-butane = (8.3 ± 0.6) × 10 -11 exp[(112 ± 18)/T], k neopentane = (7.6 ± 0.9) × 10 -11 exp[(107 ± 30)/T], cm 3 molecules -1 s -1 . The corresponding rate constants at 298 K are k propane = 7.9 × 10 -11 , k isobutane = 9.6 × 10 -11 , k- n-butane = 1.2 × 10 -10 , k neopentane =1.1 × 10 -10 cm 3 molecules -1 s -1 .},
author = {Hoobler, R J and Opansky, B J and Leone, S R},
issn = {10895639},
journal = {J. Phys. Chem. A},
number = {7},
pages = {1338--1342},
title = {{Low-temperature rate coefficients for reactions of ethynyl radical (C2H) with propane, isobutane, n-butane, and neopentane}},
volume = {101},
year = {1997}
}
@article{Hull2001,
abstract = {Dihydronicotinamide adenine dinucleotide (NADH), is known to stack in two limiting conformations. Surprisingly, previous experimental work on NADH has not clearly defined whether this folding and unfolding process can be described as first order (involving only two states) or whether one or more intermediates must be included in the description. In addition, a large disparity exists between reported equilibrium constants for the aqueous solution at room temperature. Using methanol as a denaturant, we have used fluorescence excitation transfer spectroscopy to probe the stacking/un-stacking equilibrium. Our results can be represented using a simple two state model. Furthermore, the mole fraction of aqueous NADH in the stacked configuration is significantly higher than previously reported. Using a thermodynamic two state model, we have determined $\Delta$G o (H 2 O)=8.8±1.4 kJ mol -1 . From excitation energy transfer measurements the fraction of NADH in the folded form at 295 K was determined to be 0.55. Copyright {\textcopyright} 2001 Elsevier Science B.V.},
author = {Hull, R.V. and {Conger III}, P.S. and Hoobler, R.J.},
doi = {10.1016/S0301-4622(00)00239-8},
issn = {03014622},
journal = {Biophysical Chemistry},
keywords = {Conformation,Fluorescence excitation transfer spectroscopy,Folding,NADH},
number = {1},
title = {{Conformation of NADH studied by fluorescence excitation transfer spectroscopy}},
volume = {90},
year = {2001}
}
@inproceedings{Gubiotti2003,
abstract = {Ion beam implantation of silicon with hydrogen is a method of producing thin silicon films for the manufacture of silicon on insulator (SOI) wafers. The implanted hydrogen depth profiles are traditionally measured using nuclear reaction analysis (NRA) or secondary ion mass spectrometry (SIMS) which have the disadvantages of requiring specialized equipment and, in the case of SIMS, being a destructive measurement. In the current work, a simplified method of measuring the depth profile of implanted hydrogen ions in silicon has been developed. Using a spectroscopic ellipsometer, optical data are collected from hydrogen implanted silicon wafers in a non-contact and non-destructive manner. The ellipsometric data from 600-980 nm wavelength are then analyzed by modeling the damage as a graded sub-surface layer in the silicon. By fitting this model to the experimental data, values for the depth of the implantation and the width of the implantation distribution can be extracted. This method offers the advantages of being repeatable, fast, and non-destructive, as well as using a piece of metrology equipment readily available in most semiconductor fabs. The method has been tested over a range of implant energies (24-92 keV) and hydrogen doses and shows excellent correlation to traditional NRA measurements for implant depth profile.},
author = {Gubiotti, T. and Jacy, D. and Hoobler, R.J.},
booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
doi = {10.1117/12.499100},
issn = {0277786X},
keywords = {Depth profile,Ellipsometry,Ion beam,Metrology,SOI,Thin film},
title = {{Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry}},
volume = {5041},
year = {2003}
}
@article{Lee2000a,
abstract = {Rate coefficients for the reaction C 2 H + C 2 H 2 → C 4 H 2 + H are measured at 90 and 120 K by using a new pulsed Laval nozzle apparatus equipped with laser ionization, time-of-flight mass spectrometric detection. The C 2 H radicals are generated by 193 nm laser photolysis of C 2 H 2 , and the reaction product, C 4 H 2 , is directly detected by single-photon ionization at 118 nm (10.5 eV). Rate coefficients of (2.7 ± 0.5) × 10 -10 and (2.5 ± 0.4) × 10 -10 cm 3 molecule -1 s -1 are obtained at 90 and 120 K, compared to the room temperature value of 1.3 × 10 -10 cm 3 molecule -1 s -1 . The results show a significant negative temperature dependence of the reaction rate coefficient below room temperature. The implications for models of planetary atmospheres, such as for Titan, are discussed. Copyright 2000 by the American Geophysical Union.},
author = {Lee, S. and Samuels, D.A. and Hoobler, R.J. and Leone, S.R.},
issn = {01480227},
journal = {Journal of Geophysical Research E: Planets},
number = {E6},
title = {{Direct measurements of rate coefficients for the reaction of ethynyl radical (C2H) with C2H2 at 90 and 120 K using a pulsed Laval nozzle apparatus}},
volume = {105},
year = {2000}
}
@inproceedings{Hoobler2003,
abstract = {Optical Critical Dimension (OCD) measurements using Normal-Incidence Spectroscopic Ellipsometry (polarized reflectance) allow for the separation of transverse electric and transverse magnetic modes of light reflected from an anisotropic sample as found in a periodic grating structure. This can provide the means for determining linewidths and analyzing complex profiles for a variety of structures found in mask fabrication. The normal-incidence spectroscopic ellipsometer maintains much of the simplicity in mechanical design found in a standard reflectometer and the additional polarizing element has no effect on the footprint making the system amenable for integration, inline monitoring and advanced process control. The rigourous coupled wave analysis (RCWA) method provides an exact method for calculating the diffraction of electromagnetic waves by periodic grating structures. We have extended OCD technology to critical measurement points in the mask fabrication process: After development inspection (ADI), where OCD evaluates mask writer performance and after etch inspection (AEI) for monitoring and control of etched quartz structures for phase shift applications. The determination of important, critical dimensions via optical techniques is appealing for several reasons: the method is non-destructive to photoresist and the sample is not subject to charging effects; the technique is capable of measuring the critical dimensions of grating structures down to approximately 40 nm; minimal facilities are required for installation (no high vacuum, cooling or shielding of electromagnetic fields). Results will be presented showing the capabilities of OCD metrology for ADI and AEI applications. Comparisons will be made with both CD-SEM and X-SEM and the application to monitoring/controlling the quartz etch process will be discussed.},
author = {Hoobler, R.J. and Apak, E.},
booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
issn = {0277786X},
keywords = {ADI,AEI,Normal incidence spectroscopic ellipsometry,OCD,Scatterometry},
number = {1},
title = {{Optical critical dimension (OCD) measurements for profile monitoring and control: Applications for mask inspection and fabrication}},
volume = {5256},
year = {2003}
}
@article{Hoobler1997a,
abstract = {Rate coefficients for the reactions of C 2 H + HCN → products and C 2 H + CH 3 CN → products have been measured over the temperature range 262-360 K. These experiments represent an ongoing effort to accurately measure reaction rate coefficients of the ethynyl radical, C 2 H, relevant to planetary atmospheres such as those of Jupiter and Saturn and its satellite Titan. Laser photolysis of C 2 H 2 used to produce C 2 H, and transient infrared laser absorption is employed to measure the decay of C 2 H to obtain the subsequent reaction rates in a transverse flow cell. Rate constants for the reaction C 2 H + HCN → products are found to increase significantly with increasing temperature and are measured to be (3.9-6.2) × 10 -13 cm 3 molecules -1 s -1 over the temperature range of 297-360 K. The rate constants for the reaction C 2 H + CH 3 CN → products are also found to increase substantially with increasing temperature and are measured to be (1.0-2.1) × 10 -12 cm 3 molecules -1 s -1 over the temperature range of 262-360 K. For the reaction C 2 H + HCN → products, ab initio calculations of transition state structures are used to infer that the major products form via an addition/elimination pathway. The measured rate constants for the reaction of C 2 H + HCN → products are significantly smaller than values currently employed in photochemical models of Titan, which will affect the HC 3 N distribution. Copyright 1997 by the American Geophysical Union.},
author = {Hoobler, R.J. and Leone, S.R.},
doi = {10.1029/97JE02526},
issn = {01480227},
journal = {$\backslash$jgr},
keywords = {Planetology: Comets and Small Bodies},
number = {E12},
pages = {28717},
title = {{Rate coefficients for reactions of ethynyl radical (C2H) with HCN and CH3CN: Implications for the formation of complex nitriles on Titan}},
volume = {102},
year = {1997}
}
@article{Gise2004,
abstract = {Integrated metrology is rapidly becoming an APC enabler as device manufacturers and OEMs face increasingly critical processes. New manufacturing process technologies are driving the need for tighter process control. Integrated metrology also provides rapid fault detection, improved excursion control and loss prevention, which can be elusive with a stand-alone-only metrology strategy. Integrated OCD metrology can also be used to characterize the sources of error in CD uniformity across the entire wafer.},
author = {Gise, P. and Hoobler, R.},
issn = {01633767},
journal = {Semiconductor International},
number = {5},
title = {{Integrated metrology adopts stronger APC role}},
volume = {27},
year = {2004}
}
@article{Hoobler2005,
abstract = {Optical critical-dimension (OCD) metrology to provide a powerful tool to determine linewidths and analyze the complex profiles for a variety of structures found in mask fabrication is discussed. OCD technology has been applied to a number of critical measurement steps in the photomask fabrication process which includes after-development inspection (ADI) and after-etch inspection (AEI) for binary and phase-shift mask (PSM). OCD technology can be used to measure CD uniformity (CDU) for ADI samples. Given the difficulty in obtaining X-SEM images for mask samples, the possiblity of using OCD measurements for profiling is found to be very appealing.},
author = {Hoobler, R. and Gise, P.},
issn = {0038111X},
journal = {Solid State Technology},
number = {4},
title = {{Mask metrology using: OCD for profiling}},
volume = {48},
year = {2005}
}
@inproceedings{Zavecz2005,
abstract = {It's commonly reported that a difference exists between directly measured reticle feature dimensions and those produced in the final lithographic image. Quantifying this mask error function (MEF) and the sources of the perturbation has been the topic of many papers of the past several years. Past studies have been content to evaluate these functions by statistical averaging thereby neglecting the potential influence of process and exposure contributions. The material presented here represents the findings of an extensive study of reticle-process interactions. Phase I of the evaluation consisted of focus and dose exposures of the reticle and subsequent modeling of the full-profile response. This analysis provided extensive information on the optimum-printed feature profiles while removing the contribution of across-field focus variations. The reticle was directly characterized using both conventional SEM and a new Nanometrics OCD Scatterometer technique. The full-field modeled response surface of the directly measured feature characteristics are then used to calculate the across-field MEF and provide an improved estimate of the true response of the feature to exposure. Phase II of the analysis turns its attention to characterization of the full-wafer process response. Both the modeled and directly measured reticle surfaces were removed from Scatterometry measured full-wafer exposures. Normal process variations consisting of photoresist and ARC thickness volatility are next used to show the response of the printed feature. Finally a summary of the relative contribution of each process perturbation to the feature profile error budget is discussed.},
author = {Zavecz, T.E. and Hoobler, R.},
booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
doi = {10.1117/12.600235},
issn = {0277786X},
keywords = {Aberration,Lens,Model,Perturbation,Process control,SEM,Scanner,Scatterometry,Semiconductor,Wafer},
number = {PART 2},
title = {{Models for reticle performance and comparison of direct measurement}},
volume = {5754},
year = {2005}
}
@misc{Hoobler1998,
abstract = {Optical orientation of reagents is one approach to achieving selectivity in a chemical reaction and has been used successfully to shift the point of equilibrium in bulk reaction mixtures of alkali-metal atoms and dimers. In addition to the continuous control of the point of equilibrium in the dimerization of sodium atoms, the control of the ortho-para nuclear spin distribution is shown here to also be a function of the degree of atomic spin orientation over a broad range. The direction of the spin conversion is para to ortho. For a mutlicomponent vapor, the optical orientation of 6 Li in a mixture of lithium-6 and lithium-7 is shown to produce a continuous and selective control of the isotopic dimer concentrations. 6 Li 2 (para) is selectively destroyed in the presence of the other dimer species. In this way the composition of a multicomponent metal vapor system at chemical equilibrium can be manipulated. The constraint produced by the optical orientation of one of the reagents offers a technique whereby the equilibrium yield of a multicomponent bulk chemical reaction can be laser controlled in a selective and continuous fashion.},
author = {Hoobler, R J and Bernheim, R A},
booktitle = {Physical Review A},
issn = {10502947},
number = {3},
pages = {1967--1971},
title = {{Effects of atomic orientation on atom-dimer equilibria in alkali-metal vapors}},
url = {file:///../../../../../BackUp/atomic/public{\_}html/preprnts/},
volume = {57},
year = {1998}
}
@article{Hoobler1999,
abstract = {Low-temperature rate coefficients for the reactions C 2 H + C 3 H 4 → products [C 3 H 4 = methylacetylene (propyne) CH 3 CCH and allene (propadiene) CH 2 CCH 2 ] are measured over the temperature range of 155-298 K. Absolute rate constants are determined using laser photolysis and transient infrared absorption spectroscopy. Both reactions are fast, approaching the kinetic limit and have either no temperature dependence or a slight negative temperature dependence. Over the experimental temperature range, the rate constants are fit to the following Arrhenius expressions: k CH3CCH = (1.6 ± 0.4) × 10 -10 exp[(71 ± 50)/T] cm 3 molecule -1 s -1 and k CH2CCH2 = (1.3 ± 0.6) × 10 -10 exp[(103 ± 136)/T] cm 3 molecule -1 s -1 . The corresponding rate constants at 298 K are k CH3CCH = (1.9 ± 0.3) × 10 -10 cm 3 molecule -1 S -1 and k CH2CCH2 = (1.7 ± 0.3) × 10 -10 cm 3 molecule -1 s -1 . These measurements provide new reaction rate coefficients for the ethynyl radical, C 2 H, with C 3 H 4 unsaturated hydrocarbons. These are necessary to extend current photochemical models of Jupiter, Saturn, and its satellite Titan.},
author = {Hoobler, R.J. and Leone, S.R.},
issn = {10895639},
journal = {Journal of Physical Chemistry A},
number = {2-10},
title = {{Low-Temperature Rate Coefficients for Reactions of the Ethynyl Radical (C2H) with C3H4 Isomers Methylacetylene and Allene}},
volume = {103},
year = {1999}
}
@article{Hoobler2003a,
abstract = {The normal-incidence spectroscopic ellipsometry for optical critical dimension (OCD) metrology is discussed. It is found that normal-incidence polarized reflectance spectra of line-space patterns provide the same type of CD information as more complex scatterometry, ellipsometry, and reflectometry. Application of OCD to photoresist grating structures and comparison of OCD to CD-SEM is also presented.},
author = {Hoobler, R.J.},
issn = {1074407X},
journal = {Microlithography World},
number = {1},
title = {{Normal-incidence spectroscopic ellipsometry for optical CD metrology}},
volume = {12},
year = {2003}
}