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testexport.json
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[{
"author": "Carpeno, David Framil;Ohmura, Takahito;Zhang, Ling;Leveneur, Jerome;Dickinson, Michelle;Seal, Christopher;Kennedy, John\nand Hyland, Margaret",
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"paper": "Nanomechanical and in situ TEM characterization of boron carbide thin\nfilms on helium implanted substrates: Delamination, real-time cracking\nand substrate buckling",
"parentId": null,
"timesCited": "0",
"universities": "univ auckland",
"year": "2015"
},{
"author": "Schwab, Mark J.;Han, Jung;Pfefferle, Lisa D.",
"citedReferences": "Fu DJ, 2001, APPL PHYS LETT, V78, P1309, DOI 10.1063/1.1351516.\nGao Y, 2004, APPL PHYS LETT, V84, P3322, DOI 10.1063/1.1719281.\nGautier G, 2013, J ELECTROCHEM SOC, V160, pD372, DOI 10.1149/2.082309jes.\nHuygens IM, 2000, J ELECTROCHEM SOC, V147, P1797, DOI 10.1149/1.1393436.\nJung Y, 2012, J ELECTROCHEM SOC, V159, pH117, DOI 10.1149/2.039202jes.\nJung Y, 2010, J ELECTROCHEM SOC, V157, pH676, DOI 10.1149/1.3384713.\nLu ZH, 1998, PHYS REV B, V58, P13820, DOI 10.1103/PhysRevB.58.13820.\nNg HM, 2003, J APPL PHYS, V94, P650, DOI 10.1063/1.1582233.\nPeng LH, 1998, APPL PHYS LETT, V72, P939, DOI 10.1063/1.120879.\nRittenhouse TL, 2004, J APPL PHYS, V95, P490, DOI 10.1063/1.1634369.\nSchwab MJ, 2013, J PHYS CHEM C, V117, P16890, DOI 10.1021/jp401890d.\nShishkin Y, 2004, J APPL PHYS, V96, P2311, DOI 10.1063/1.1768612.\nTseng WJ, 2014, J PHYS CHEM C, V118, P29492, DOI 10.1021/jp508314q.\nVartuli CB, 1997, SOLID STATE ELECTRON, V41, P1947, DOI 10.1016/S0038-1101(97)00173-1.\nWolff T, 2004, PHYS STATUS SOLIDI A, V201, P2067, DOI 10.1002/pssa.200406829.\nZhang SY, 2014, CHINESE PHYS B, V23, DOI 10.1088/1674-1056/23/5/058101.\nZhang SY, 2013, CHINESE PHYS LETT, V30, DOI 10.1088/0256-307X/30/5/056801.\nZHANG XG, 1991, J ELECTROCHEM SOC, V138, P3750, DOI 10.1149/1.2085494.\nZhang Y, 2010, PHYS STATUS SOLIDI B, V247, P1713, DOI 10.1002/pssb.200983650.",
"paper": "Neutral anodic etching of GaN for vertical or crystallographic alignment",
"parentId": null,
"timesCited": "0",
"universities": "yale univ",
"year": "2015"
},{
"author": "Iacopi, Francesca;Van Hove, Marleen;Charles, Matthew;Endo, Kazuhiro",
"citedReferences": "Abuishmais Ibrahim, 2012, Advances in Power Electronics, DOI 10.1155/2012/765619.\nAgarwal A., 2004, MRS P, V815, pJ11, DOI 10.1557/PROC-815-J1.1.\nAgarwal A. K., 2010, INT C POW CONTR EMB, P1.\nAggerstam T, 2006, PHYS STATUS SOLIDI C, V3, P2373, DOI 10.1002/pssc.200565152.\nAmano H, 2013, JPN J APPL PHYS, V52, DOI 10.7567/JJAP.52.050001.\n{[}Anonymous], 2004, SCIENCE, V303, P1731.\nBose B. K., 2012, IEEE T IND ELECTRON, V60, P2638.\nBoyd AR, 2009, PHYS STATUS SOLIDI C, V6, pS1045, DOI 10.1002/pssc.200880925.\nDai Q, 2009, APPL PHYS LETT, V94, DOI 10.1063/1.3100773.\nFriedli T, 2009, IEEE T IND APPL, V45, P1868, DOI 10.1109/TIA.2009.2027538.\nHamada K, 2015, IEEE T ELECTRON DEV, V62, P278, DOI 10.1109/TED.2014.2359240.\nHart D. W., 2010, POWER ELECT.\nIntergovernmental Panel for Climate Change, 2014, CLIM CHANG 2014 SYNT.\nJatal W., 2014, IEEE ELECTR DEVICE L, V36, P123.\nJiang QM, 2013, IEEE ELECTR DEVICE L, V34, P357, DOI 10.1109/LED.2012.2236637.\nSelvaraj J, 2009, JPN J APPL PHYS, V48, DOI 10.1143/JJAP.48.121002.\nKato S, 2007, J CRYST GROWTH, V298, P831, DOI 10.1016/j.jcrysgro.2006.10.192.\nKimoto T., 2014, INT EL DEV M IEDM 20, P36.\nKusumori T, 2004, APPL PHYS LETT, V84, P1272, DOI 10.1063/1.1649797.\nLu B., 2013, THESIS MIT.\nMcNutt M. T., 2014, J ELECT MAT, V43, P4552.\nMueller S. G., 2012, J CRYST GROWTH, V352, P39.\nNew York State Governor's Press Office, 2014, GOV CUOM ANN 100 BUS.\nOkumura H, 2006, JPN J APPL PHYS 1, V45, P7565, DOI 10.1143/JJAP.45.7565.\nPearton S. J., 2012, GAN ZNO BASED MAT DE.\nRupp R., 2014, INT EL DEV M IEDM 20, P28.\nSamago H., 2014, IEEE T POWER ELECTR, V29, P2539.\nSolomon S., 2007, CLIMATE CHANGE 2007.\nSrivastava P, 2010, IEEE ELECTR DEVICE L, V31, P851, DOI 10.1109/LED.2010.2050673.\nStringfellow G. B., 1999, ORGANOMETALLIC VAPOU.\nSugimoto M., 2007, P IEEE POW CONV C, V368.\nTolbert L. M., 2003, IASTED INT C POW EN, P317.\nVetury R, 2001, IEEE T ELECTRON DEV, V48, P560, DOI 10.1109/16.906451.\nYole Developpement, 2012, STAT POW EL IND.\nYole Developpement, 2014, POW GAN GAN TECHN PO.\nYole Technologies PowerDev, 2012, IND REV.",
"paper": "Power electronics with wide bandgap materials: Toward greener, more\nefficient technologies",
"parentId": null,
"timesCited": "0",
"universities": "griffith univ",
"year": "2015"
},{
"author": "Ishibashi, Takaharu;Okamoto, Masayuki;Hiraki, Eiji;Tanaka, Toshihiko;Hashizume, Tamotsu;Kikuta, Daigo;Kachi, Tetsu",
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"paper": "Experimental Validation of Normally-On GaN HEMT and Its Gate Drive\nCircuit",
"parentId": null,
"timesCited": "0",
"universities": "yamaguchi univ",
"year": "2015"
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"author": "Cheah, S. F.;Lee, S. C.;Ng, S. S.;Yam, F. K.;Abu Hassan, H.;Hassan, Z.",
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"paper": "Luminescence evolution of porous GaN thin films prepared via UV-assisted\nelectrochemical etching",
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"author": "Fong, C. Y.;Ng, S. S.;Yam, F. K.;Abu Hassan, H.;Hassan, Z.",
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"paper": "An investigation of sol-gel spin coating growth of wurtzite GaN thin\nfilm on 6H-SiC substrate",
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"paper": "Electrothermal Mapping of AlGaN/GaN HEMTs Using Microresistance\nThermometer Detectors",
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"author": "Shenai, Krishna;Chattopadhyay, Abhiroop",
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"paper": "Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes",
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"year": "2015"
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"author": "Mantooth, Homer Alan;Peng, Kang;Santi, Enrico;Hudgins, Jerry\nL.",
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"paper": "Modeling of Wide Bandgap Power Semiconductor Devices-Part I",
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"year": "2015"
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"author": "Santi, Enrico;Peng, Kang;Mantooth, Homer Alan;Hudgins, Jerry\nL.",
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"paper": "Modeling of Wide-Bandgap Power Semiconductor Devices-Part II",
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"timesCited": "0",
"universities": "univ s carolina",
"year": "2015"
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"author": "Kusaka, Keisuke;Itoh, Jun-ichi",
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"paper": "Fundamental Evaluation of Power Supply and Rectifiers for Wireless Power\nTransfer Using Magnetic Resonant Coupling",
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"timesCited": "0",
"universities": "nagaoka univ technol",
"year": "2015"
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"paper": "Stress related aspects of GaN technology physics",
"parentId": null,
"timesCited": "0",
"universities": "portland state univ",
"year": "2015"
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"author": "King, Sean W.;Davis, Robert F.;Nemanich, Robert J.",
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"paper": "Gas source molecular beam epitaxy of scandium nitride on silicon carbide\nand gallium nitride surfaces",
"parentId": null,
"timesCited": "4",
"universities": "intel corp",
"year": "2014"
},{
"author": "Lin, Tao;Liu, Xin;Zhou, Bin;Zhan, Zhiyong;Cartwright, Alexander N.;Swihart, Mark T.",
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"paper": "A Solution-Processed UV-Sensitive Photodiode Produced Using a New\nSilicon Nanocrystal Ink",
"parentId": null,
"timesCited": "3",
"universities": "nanjing univ",
"year": "2014"
},{
"author": "Shen, Huaxiang;Li, Bo;Yu, Luke Hao-Ling;Kitai, Adrian",
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"universities": "mcmaster univ",
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},{
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"paper": "The influence of reactor height adjustment on properties in GaN films\ngrown on 6H-SiC by metal organic chemical vapor deposition",
"parentId": null,
"timesCited": "0",
"universities": "dalian univ technol",
"year": "2014"
},{
"author": "Noh, Youn Sub;Choi, Yun Ho;Yom, In-Bok",
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"paper": "Ku-band GaN HPA MMIC with high-power and high-PAE performances",
"parentId": null,
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"universities": "elect \\& telecommun res inst",
"year": "2014"
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"author": "Roccaforte, Fabrizio;Fiorenza, Patrick;Greco, Giuseppe;Lo\nNigro, Raffaella;Giannazzo, Filippo;Patti, Alfonso;Saggio, Mario",
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"paper": "Challenges for energy efficient wide band gap semiconductor power\ndevices",
"parentId": null,
"timesCited": "1",
"universities": null,
"year": "2014"
},{
"author": "Kukushkin, S. A.;Osipov, A. V.",
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"paper": "Theory and practice of SiC growth on Si and its applications to wide-gap\nsemiconductor films",
"parentId": null,
"timesCited": "4",
"universities": "russian acad sci",
"year": "2014"
},{
"author": "Brazzini, T.;Martin-Horcajo, S.;Romero, M. F.;Gacevic, Z.\nand Calle, F.",
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"paper": "Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and\nelectrical methods",
"parentId": null,
"timesCited": "0",
"universities": "univ bristol",
"year": "2014"
},{
"author": "Le, Minh-Quy",
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"paper": "Atomistic Study on the Tensile Properties of Hexagonal AlN, BN, GaN, InN\nand SiC Sheets",
"parentId": null,
"timesCited": "6",
"universities": "hanoi univ sci \\& technol",
"year": "2014"
},{
"author": "Roccaforte, F.;Fiorenza, P.;Greco, G.;Vivona, M.;Lo\nNigro, R.;Giannazzo, F.;Patti, A.;Saggio, M.",
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"paper": "Recent advances on dielectrics technology for SiC and GaN power devices",
"parentId": null,
"timesCited": "2",
"universities": null,
"year": "2014"
},{
"author": "Kaminski, Nando;Hilt, Oliver",
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"paper": "SiC and GaN devices - wide bandgap is not all the same",
"parentId": null,
"timesCited": "0",
"universities": "univ bremen",
"year": "2014"
},{
"author": "Lemmon, Andrew;Mazzola, Michael;Gafford, James;Parker, Christopher",
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"paper": "Instability in Half-Bridge Circuits Switched With Wide Band-Gap\nTransistors",
"parentId": null,
"timesCited": "3",
"universities": "univ alabama",
"year": "2014"
},{
"author": "Mitova, Radoslava;Ghosh, Rajesh;Mhaskar, Uday;Klikic, Damir\nand Wang, Miao-Xin;Dentella, Alain",
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"paper": "Investigations of 600-V GaN HEMT and GaN Diode for Power Converter\nApplications",
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"paper": "High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs",
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"parentId": null,
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"author": "Chen Wei-Chao;Tang Hui-Li;Luo Ping;Ma Wei-Wei;Xu\nXiao-Dong;Qian Xiao-Bo;Jiang Da-Peng;Wu Feng;Wang\nJing-Ya;Xu Jun",
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"year": "2014"
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"author": "Abbate, C.;Alderighi, M.;Baccaro, S.;Busatto, G. and\nCitterio, M.;Cova, P.;Delmonte, N.;De Luca, V.;Fiore, S.\nand Gerardin, S.;Ghisolfi, E.;Giuliani, F.;Iannuzzo, F. and\nLanza, A.;Latorre, S.;Lazzaroni, M.;Meneghesso, G. and\nPaccagnella, A.;Rampazzo, F.;Riva, M.;Sanseverino, A. and\nSilvestri, R.;Spiazzi, G.;Velardi, F.;Zanoni, E.",
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"year": "2014"
},{
"author": "Shenai, Krishna",
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"author": "Shenai, Krishna",
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"parentId": null,
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"year": "2014"
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"author": "Fu, Lixing;Zhang, Xuan;Scott, Mark;Yao, Chengcheng;Wang, Jin",
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"parentId": null,
"timesCited": "0",
"universities": "ohio state univ",
"year": "2014"
},{
"author": "Cui, Yutian;Xu, Fan;Zhang, Weimin;Guo, Ben;Tolbert, Leon\nM.;Wang, Fred;Blalock, Benjamin J.;Jenkins, Luke L. and\nWilson, Christopher G.;Aggas, Jeffrey M.;Rhea, Benjamin K. and\nMoses, Justin D.;Dean, Robert N.",
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"paper": "High Efficiency Data Center Power Supply Using Wide Band Gap Power\nDevices",
"parentId": null,
"timesCited": "1",
"universities": "univ tennessee",
"year": "2014"
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"author": "Rafin, S. M. Sajjad Hossain;Lipo, Thomas A.;Kwon, Byung-il",
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"paper": "A Novel Topology for a Voltage Source Inverter with Reduced Transistor\nCount and Utilizing Naturally Commutated Thyristors with Simple\nCommutation",
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"timesCited": "0",
"universities": "hanyang univ",
"year": "2014"
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"author": "Rodak, L. E.;Sampath, A. V.;Gallinat, C. S.;Smith, J. and\nChen, Y.;Zhou, Q.;Campbell, J. C.;Shen, H.;Wraback, M.",
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"paper": "A III-nitride polarization enhanced electron filter for controlling the\nspectral response of solar-blind AlGaN/AlN/SiC photodiodes",
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"year": "2014"
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"author": "Otto, Alexander;Kaulfersch, Eberhard;Brinkfeldt, Klas and\nNeumaier, Klaus;Zschieschang, Olaf;Andersson, Dag;Rzepka, Sven",
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"parentId": null,
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"universities": "fraunhofer inst elect nano syst enas",
"year": "2014"
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"author": "Ueda, Tetsuzo",
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"parentId": null,
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"universities": "panasonic corp",
"year": "2014"
},{
"author": "Kane, M. H.;Arefin, N.",
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"paper": "Gallium nitride (GaN) on silicon substrates for LEDs",
"parentId": null,
"timesCited": "0",
"universities": "texas a\\&m univ",
"year": "2014"
},{
"author": "Shenai, Krishna;Dudley, Michael;Davis, Robert F.",
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"paper": "Rugged Electrical Power Switching in Semiconductors: A Systems Approach",
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"timesCited": "4",
"universities": "carnegie mellon univ",
"year": "2014"
},{
"author": "Chang, Woojin;Jeon, Gye-Ik;Park, Young-Rak;Mun, Jae-Kyoung",
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"paper": "X-BAND MMIC LOW-NOISE AMPLIFIER MMIC ON SiC SUBSTRATE USING 0.25-mu m\nALGaN/GaN HEMT TECHNOLOGY",
"parentId": null,
"timesCited": "1",
"universities": "elect \\& telecommun res inst",
"year": "2014"
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"author": "Shenai, Krishna",
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"paper": "THE PERFECT POWER SEMICONDUCTOR SWITCH FOR 21st CENTURY GLOBAL ENERGY\nECONOMY",
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"universities": null,
"year": "2013"
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"author": "Ratnikov, V. V.;Kalmykov, A. E.;Myasoedov, A. V.;Kukushkin, S. A.;Osipov, A. V.;Sorokin, L. M.",
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"paper": "Sequential structural characterization of layers in the\nGaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage",
"parentId": null,
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"universities": "russian acad sci",
"year": "2013"
},{
"author": "Tsivion, David;Joselevich, Ernesto",
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"paper": "Guided Growth of Epitaxially Coherent GaN Nanowires on SiC",
"parentId": null,
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},{
"author": "Babic, Dubravko I.",
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"paper": "Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier-Series\nExpansion",
"parentId": null,
"timesCited": "1",
"universities": "univ zagreb",
"year": "2013"
},{
"author": "Chowdhury, Srabanti;Mishra, Umesh K.",
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"paper": "Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure",
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"universities": "arizona state univ",
"year": "2013"
},{
"author": "Dietrich, Peter",
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},{
"author": "Eddy, Jr., Charles R.;Nepal, Neeraj;Hite, Jennifer K. and\nMastro, Michael A.",
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"paper": "Perspectives on future directions in III-N semiconductor research",
"parentId": null,
"timesCited": "7",
"universities": null,
"year": "2013"
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"author": "Miyake, Hiroki;Kimoto, Tsunenobu;Suda, Jun",
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"paper": "AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN\nShort-Period Superlattice Emitter",
"parentId": null,
"timesCited": "2",
"universities": "kyoto univ",
"year": "2013"
},{
"author": "Rodak, L. E.;Sampath, A. V.;Gallinat, C. S.;Chen, Y. and\nZhou, Q.;Campbell, J. C.;Shen, H.;Wraback, M.",
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"paper": "Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced\nelectron filter",
"parentId": null,
"timesCited": "3",
"universities": "univ virginia",
"year": "2013"
},{
"author": "Chowdhury, Srabanti;Swenson, Brian L.;Wong, Man Hoi;Mishra, Umesh K.",
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"paper": "Current status and scope of gallium nitride-based vertical transistors\nfor high-power electronics application",
"parentId": null,
"timesCited": "6",
"universities": "arizona state univ",
"year": "2013"
},{
"author": "Krupka, Jerzy",
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"paper": "Contactless methods of conductivity and sheet resistance measurement for\nsemiconductors, conductors and superconductors",
"parentId": null,
"timesCited": "6",
"universities": "tech univ warsaw",
"year": "2013"
},{
"author": "Choi, Sukwon;Heller, Eric R.;Dorsey, Donald;Vetury, Ramakrishna;Graham, Samuel",
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"parentId": null,
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"universities": "georgia inst technol",
"year": "2013"
},{
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"parentId": null,
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"universities": "natl taiwan univ",
"year": "2013"
},{
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"parentId": null,
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"universities": "russian acad sci",
"year": "2013"
},{
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"parentId": null,
"timesCited": "0",
"universities": "arkansas power elect int apei inc",
"year": "2013"
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"parentId": null,
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},{
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"parentId": null,
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"universities": "yamaguchi univ",
"year": "2013"
},{
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},{
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},{
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},{
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},{
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},{
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"author": "Shenai, Krishna",
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"universities": null,
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"paper": "True ``Figure of Merit (FOM){''} of a Power Semiconductor Switch",
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"author": "Robbins, William P.;Mohan, Ned",
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"paper": "Power Semiconductor Device Education: Which Topics and What Depth?",
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"timesCited": "1",
"universities": "univ minnesota",
"year": "2013"
},{
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"parentId": null,
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"universities": "univ arkansas",
"year": "2013"
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"author": "Shenai, Krishna",
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"paper": "Manufacturing Challenges in Wide Band Gap (WBG) Power Electronics",
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"year": "2013"
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"author": "Hasanzadeh, A.;Khaligh, A.",
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"paper": "Studying the Performance of Series-Connected GaN FETs in Higher Voltage\nSwitching Applications",
"parentId": null,
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"universities": "univ maryland",
"year": "2013"
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"author": "Sorokin, L. M.;Kalmykov, A. E.;Myasoedov, A. V.;Bessolov, V.\nN.;Osipov, A. V.;Kukushkin, S. A.",
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"parentId": null,
"timesCited": "0",
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"year": "2013"
},{
"author": "Dallaeva, D.;Korostylev, E.;Bilalov, B.;Tomanek, P.",
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"universities": "brno univ technol",
"year": "2013"
},{
"author": "Maize, Kerry;Heller, Eric;Dorsey, Donald;Shakouri, Ali",
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"parentId": null,
"timesCited": "0",
"universities": "univ calif santa cruz",
"year": "2013"
},{
"author": "Pittini, Riccardo;Zhang, Zhe;Andersen, Michael A. E.",
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"universities": "tech univ denmark",
"year": "2013"
},{
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"paper": "Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor\nPower Switching Devices",
"parentId": null,
"timesCited": "8",
"universities": "carnegie mellon univ",
"year": "2013"
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"author": "Suhir, E.",
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"paper": "Lattice-Misfit Stresses in a Circular Bi-Material Gallium-Nitride\nAssembly",
"parentId": null,
"timesCited": "0",
"universities": "univ calif santa cruz",
"year": "2013"
},{
"author": "Maeda, Masakatsu;Takahashi, Yasuo",
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},{
"author": "Sarnago, H.;Lucia, O.;Mediano, A.;Burdio, J. M.",
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"year": "2012"
},{
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"year": "2012"
},{
"author": "Guo, Fawen;Yang, Bin;Yuan, Yongbo;Xiao, Zhengguo;Dong, Qingfeng;Bi, Yu;Huang, Jinsong",
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},{
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"paper": "Liquid phase growth of graphene on silicon carbide",
"parentId": null,
"timesCited": "6",
"universities": "nec corp ltd",
"year": "2012"
},{
"author": "Khaligh, Alireza;Dusmez, Serkan",
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"paper": "Comprehensive Topological Analysis of Conductive and Inductive Charging\nSolutions for Plug-In Electric Vehicles",
"parentId": null,
"timesCited": "36",
"universities": "univ maryland",
"year": "2012"
},{
"author": "Birafane, A.;Aflaki, P.;Kouki, A. B.;Ghannouchi, F. M.",
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"paper": "Enhanced DC model for GaN HEMT transistors with built-in thermal and\ntrapping effects",
"parentId": null,
"timesCited": "1",
"universities": "univ calgary",
"year": "2012"
},{
"author": "Aida, Hideo;Doi, Toshiro;Takeda, Hidetoshi;Katakura, Haruji\nand Kim, Seong-Woo;Koyama, Koji;Yamazaki, Tsutomu;Uneda, Michio",
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"paper": "Ultraprecision CMP for sapphire, GaN, and SiC for advanced\noptoelectronics materials",
"parentId": null,
"timesCited": "17",
"universities": "kyushu univ",
"year": "2012"
},{
"author": "Russo, Salvatore;d'Alessandro, Vincenzo;Costagliola, Maurizio\nand Sasso, Grazia;Rinaldi, Niccolo",
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"paper": "Analysis of the thermal behavior of AlGaN/GaN HEMTs",
"parentId": null,
"timesCited": "4",
"universities": "univ naples federico ii",
"year": "2012"
},{
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"paper": "Critical issues for interfaces to p-type SiC and GaN in power devices",
"parentId": null,
"timesCited": "6",
"universities": "univ catania",
"year": "2012"
},{
"author": "Tripathy, Pravash R.;Mukherjee, Moumita;Pati, Shankar P.",
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"paper": "MM-wave performance and avalanche noise estimation of hexagonal SiC and\nGaN IMPATTs for D-band applications",
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"timesCited": "2",
"universities": "purushottam inst engn \\& technol",
"year": "2012"
},{
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"parentId": null,
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"universities": "yaskawa amer inc",
"year": "2012"
},{
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"paper": "A Review of GaN on SiC High Electron-Mobility Power Transistors and\nMMICs",
"parentId": null,
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"universities": "cree inc",
"year": "2012"
},{
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"parentId": null,
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"universities": null,
"year": "2012"
},{
"author": "Hens, P.;Jokubavicius, V.;Liljedahl, R.;Wagner, G. and\nYakimova, R.;Wellmann, P.;Syvajarvi, M.",
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"paper": "Sublimation growth of thick freestanding 3C-SiC using CVD-templates on\nsilicon as seeds",
"parentId": null,
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},{
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},{
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"paper": "Approach for highly efficient and ultra compact converters in next\ngeneration 380 V DC distribution system",
"parentId": null,
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"universities": "ntt facil inc",
"year": "2012"
},{
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"parentId": null,
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"universities": null,
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},{
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"paper": "Growth and light properties of fluorescent SiC for white LEDs",
"parentId": null,
"timesCited": "0",
"universities": "linkoping univ",
"year": "2012"
},{
"author": "Hens, P.;Mueller, J.;Wagner, G.;Liljedahl, R.;Yakimova, R.;Spiecker, E.;Wellmann, P.;Syvajarvi, M.",
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"parentId": null,
"timesCited": "1",
"universities": "linkoping univ",
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},{
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"year": "2012"
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"parentId": null,
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"universities": null,
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"year": "2012"
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},{
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"year": "2011"
},{
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"parentId": null,
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"universities": "univ sains malaysia",
"year": "2011"
},{
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"year": "2011"
},{
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},{
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"paper": "Die Attach Materials for High Temperature Applications: A Review",
"parentId": null,
"timesCited": "39",
"universities": "univ sains malaysia",
"year": "2011"
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"author": "Sorokin, L. M.;Kalmykov, A. E.;Bessolov, V. N.;Feoktistov, N. A.;Osipov, A. V.;Kukushkin, S. A.;Veselov, N. V.",
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"paper": "Structural characterization of GaN epilayers on silicon: Effect of\nbuffer layers",
"parentId": null,
"timesCited": "8",
"universities": "russian acad sci",
"year": "2011"
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"author": "Trejo, Manuel;Jessen, Gregg H.;Chabak, Kelson D.;Gillespie, James K.;Crespo, Antonio;Kossler, Mauricio;Trimble, Virginia\nand Langley, Derrick;Heller, Eric R.;Claflin, Bruce;Walker, Dennis E.;Poling, Brian;Gilbert, Ryan;Via, Glen D. and\nHoelscher, John;Roussos, Jason;Ejeckam, Felix;Zimmer, Jerry",
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"parentId": null,
"timesCited": "0",
"universities": "grp4 labs inc",
"year": "2011"
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"author": "Quah, H. J.;Cheong, K. Y.;Hassan, Z.",
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"paper": "FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE\nDEVELOPMENT OF HIGH POWER APPLICATIONS",
"parentId": null,
"timesCited": "5",
"universities": "univ sains malaysia",
"year": "2011"
},{
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"year": "2011"
},{
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"universities": "russian acad sci",
"year": "2011"
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},{
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},{
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},{
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},{
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"year": "2010"
},{
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"paper": "GaN on Silicon Substrate With Various SiC Buffer Layer for UV Detecting\nApplications",
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"universities": "natl cheng kung univ",
"year": "2010"
},{
"author": "Roccaforte, F.;Giannazzo, F.;Iucolano, F.;Eriksson, J. and\nWeng, M. H.;Raineri, V.",
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"paper": "Surface and interface issues in wide band gap semiconductor electronics",
"parentId": null,
"timesCited": "25",
"universities": null,
"year": "2010"
},{
"author": "Twigg, M. E.;Picard, Y. N.;Caldwell, J. D.;Eddy, Jr., C. R.\nand Mastro, M. A.;Holm, R. T.;Neudeck, P. G.;Trunek, A. J.\nand Powell, J. A.",
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"paper": "Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC\nEpitaxial Layers Using Electron Channeling Contrast Imaging",
"parentId": null,
"timesCited": "5",
"universities": "carnegie mellon univ",
"year": "2010"