testexport.json

[{
    "author": "Carpeno, David Framil;Ohmura, Takahito;Zhang, Ling;Leveneur, Jerome;Dickinson, Michelle;Seal, Christopher;Kennedy, John\nand Hyland, Margaret", 
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    "paper": "Nanomechanical and in situ TEM characterization of boron carbide thin\nfilms on helium implanted substrates: Delamination, real-time cracking\nand substrate buckling", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "univ auckland", 
    "year": "2015"
},{
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    "paper": "Neutral anodic etching of GaN for vertical or crystallographic alignment", 
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    "universities": "yale univ", 
    "year": "2015"
},{
    "author": "Iacopi, Francesca;Van Hove, Marleen;Charles, Matthew;Endo, Kazuhiro", 
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},{
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},{
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    "year": "2015"
},{
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    "year": "2015"
},{
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},{
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    "universities": "australian natl univ", 
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},{
    "author": "Mantooth, Homer Alan;Peng, Kang;Santi, Enrico;Hudgins, Jerry\nL.", 
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    "paper": "Modeling of Wide Bandgap Power Semiconductor Devices-Part I", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "univ arkansas", 
    "year": "2015"
},{
    "author": "Santi, Enrico;Peng, Kang;Mantooth, Homer Alan;Hudgins, Jerry\nL.", 
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    "paper": "Modeling of Wide-Bandgap Power Semiconductor Devices-Part II", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "univ s carolina", 
    "year": "2015"
},{
    "author": "Kusaka, Keisuke;Itoh, Jun-ichi", 
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    "paper": "Fundamental Evaluation of Power Supply and Rectifiers for Wireless Power\nTransfer Using Magnetic Resonant Coupling", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "nagaoka univ technol", 
    "year": "2015"
},{
    "author": "Suhir, Ephraim", 
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    "timesCited": "0", 
    "universities": "portland state univ", 
    "year": "2015"
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    "author": "King, Sean W.;Davis, Robert F.;Nemanich, Robert J.", 
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},{
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},{
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    "paper": "Challenges for energy efficient wide band gap semiconductor power\ndevices", 
    "parentId": null, 
    "timesCited": "1", 
    "universities": null, 
    "year": "2014"
},{
    "author": "Kukushkin, S. A.;Osipov, A. V.", 
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    "paper": "Theory and practice of SiC growth on Si and its applications to wide-gap\nsemiconductor films", 
    "parentId": null, 
    "timesCited": "4", 
    "universities": "russian acad sci", 
    "year": "2014"
},{
    "author": "Brazzini, T.;Martin-Horcajo, S.;Romero, M. F.;Gacevic, Z.\nand Calle, F.", 
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    "paper": "Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and\nelectrical methods", 
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    "timesCited": "0", 
    "universities": "univ bristol", 
    "year": "2014"
},{
    "author": "Le, Minh-Quy", 
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    "paper": "Atomistic Study on the Tensile Properties of Hexagonal AlN, BN, GaN, InN\nand SiC Sheets", 
    "parentId": null, 
    "timesCited": "6", 
    "universities": "hanoi univ sci \\& technol", 
    "year": "2014"
},{
    "author": "Roccaforte, F.;Fiorenza, P.;Greco, G.;Vivona, M.;Lo\nNigro, R.;Giannazzo, F.;Patti, A.;Saggio, M.", 
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    "paper": "Recent advances on dielectrics technology for SiC and GaN power devices", 
    "parentId": null, 
    "timesCited": "2", 
    "universities": null, 
    "year": "2014"
},{
    "author": "Kaminski, Nando;Hilt, Oliver", 
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    "paper": "SiC and GaN devices - wide bandgap is not all the same", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "univ bremen", 
    "year": "2014"
},{
    "author": "Lemmon, Andrew;Mazzola, Michael;Gafford, James;Parker, Christopher", 
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    "paper": "Instability in Half-Bridge Circuits Switched With Wide Band-Gap\nTransistors", 
    "parentId": null, 
    "timesCited": "3", 
    "universities": "univ alabama", 
    "year": "2014"
},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "paper": "Rugged Electrical Power Switching in Semiconductors: A Systems Approach", 
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    "timesCited": "4", 
    "universities": "carnegie mellon univ", 
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "paper": "Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor\nPower Switching Devices", 
    "parentId": null, 
    "timesCited": "8", 
    "universities": "carnegie mellon univ", 
    "year": "2013"
},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "parentId": null, 
    "timesCited": "36", 
    "universities": "univ maryland", 
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},{
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},{
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},{
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},{
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    "paper": "Critical issues for interfaces to p-type SiC and GaN in power devices", 
    "parentId": null, 
    "timesCited": "6", 
    "universities": "univ catania", 
    "year": "2012"
},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "year": "2011"
},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "universities": "polish acad sci", 
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},{
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},{
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    "paper": "Synthesis of nitrides and silicon carbide using sodium", 
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    "universities": "tohoku univ", 
    "year": "2009"
},{
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    "paper": "Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001)\nsubstrates", 
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    "universities": "arizona state univ", 
    "year": "2009"
},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "parentId": null, 
    "timesCited": "1", 
    "universities": "korea univ", 
    "year": "2007"
},{
    "author": "Carter, Jason A.;Roth, Matthew D.;Horgan, Michael W. and\nShellenberger, Lisa;Hoffmann, Daniel P.;Stitt, Mark D.", 
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    "universities": "penn state univ", 
    "year": "2007"
},{
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    "universities": "natl inst adv ind sci \\& technol", 
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},{
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},{
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},{
    "author": "Moe, CG;Wu, Y;Keller, S;Speck, JS;DenBaars, SP and\nEmerson, D", 
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    "timesCited": "2", 
    "universities": "univ calif santa barbara", 
    "year": "2006"
},{
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    "paper": "Promising avenues of research in nanoscience: chemistry of semiconductor\nnanoparticles", 
    "parentId": null, 
    "timesCited": "39", 
    "universities": "russian acad sci", 
    "year": "2005"
},{
    "author": "Kikuchi, T.;Miyauchi, K.;Wada, M.;Ohachi, T.", 
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    "paper": "3C-SiC/Si template growth and atomic layer epitaxy of cubic GaN by\nRF-MBE", 
    "parentId": null, 
    "timesCited": "2", 
    "universities": "doshisha univ", 
    "year": "2005"
},{
    "author": "Zhuang, D;Edgar, JH", 
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    "universities": "kansas state univ", 
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},{
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    "paper": "Inorganic Nanowires", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": null, 
    "year": "2005"
},{
    "author": "Gupta, A;Jacob, C", 
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "paper": "Super-radiation hard particle tracking at the CERN SLHC", 
    "parentId": null, 
    "timesCited": "9", 
    "universities": "univ glasgow", 
    "year": "2003"
},{
    "author": "Davis, RF;Einfeldt, S;Preble, EA;Roskowski, AM and\nReitmeier, ZJ;Miraglia, PQ", 
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    "paper": "Gallium nitride and related materials: challenges in materials\nprocessing", 
    "parentId": null, 
    "timesCited": "51", 
    "universities": "n carolina state univ", 
    "year": "2003"
},{
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    "parentId": null, 
    "timesCited": "1", 
    "universities": "georgia inst technol", 
    "year": "2003"
},{
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    "paper": "A gallium-nitride push-pull microwave power amplifier", 
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    "timesCited": "25", 
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},{
    "author": "Seo, HW;Bae, SY;Park, J;Yang, H;Kim, B", 
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    "paper": "Direct synthesis of gallium nitride nanowires coated with boron\ncarbonitride layers", 
    "parentId": null, 
    "timesCited": "10", 
    "universities": "korea univ", 
    "year": "2003"
},{
    "author": "Tirino, L;Weber, M;Brennan, KF;Bellotti, E;Goano, M", 
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    "paper": "Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN", 
    "parentId": null, 
    "timesCited": "5", 
    "universities": "boston univ", 
    "year": "2003"
},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "parentId": null, 
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    "universities": "russian acad sci", 
    "year": "2003"
},{
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},{
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},{
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    "paper": "Micro-Raman scattering and microphotoluminescence of GaN thin films\ngrown on sapphire by metal-organic chemical vapor deposition", 
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    "timesCited": "18", 
    "universities": "georgia inst technol", 
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    "paper": "Silicon carbide benefits and advantages for power electronics circuits\nand systems", 
    "parentId": null, 
    "timesCited": "95", 
    "universities": "corp res \\& dev", 
    "year": "2002"
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    "author": "Davis, RF;Roskowski, AM;Preble, EA;Speck, JS;Heying, B\nand Freitas, JA;Glaser, ER;Carlos, WE", 
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    "paper": "Gallium nitride materials - Progress, status, and potential roadblocks", 
    "parentId": null, 
    "timesCited": "24", 
    "universities": "n carolina state univ", 
    "year": "2002"
},{
    "author": "Kemerley, RT;Wallace, HB;Yoder, MN", 
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    "timesCited": "21", 
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},{
    "author": "Nahm, KS;Mo, YH;Shajahan, M;Lee, SH", 
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    "paper": "Catalytic growth of semiconductor micro- and nano-crystals using\ntransition metal catalysts", 
    "parentId": null, 
    "timesCited": "3", 
    "universities": "chonbuk natl univ", 
    "year": "2002"
},{
    "author": "Levinshtein, ME;Rumyantsev, SL;Shur, MS;Gaska, R;Khan, MA", 
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    "paper": "Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide\nand gallium nitride", 
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    "universities": "russian acad sci", 
    "year": "2002"
},{
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    "timesCited": "0", 
    "universities": "univ illinois", 
    "year": "2002"
},{
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},{
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},{
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    "timesCited": "11", 
    "universities": "purdue univ", 
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},{
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},{
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    "paper": "Raman scattering properties of GaN thin films grown on sapphire under\nvisible and ultraviolet excitation", 
    "parentId": null, 
    "timesCited": "17", 
    "universities": "inst mat res \\& engn", 
    "year": "2001"
},{
    "author": "Kuball, M", 
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    "paper": "Raman spectroscopy of GaN, AlGaN and AlN for process and growth\nmonitoring/control", 
    "parentId": null, 
    "timesCited": "138", 
    "universities": "univ bristol", 
    "year": "2001"
},{
    "author": "Goni, AR;Siegle, H;Syassen, K;Thomsen, C;Wagner, JM", 
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    "paper": "Effect of pressure on optical phonon modes and transverse effective\ncharges in GaN and AlN", 
    "parentId": null, 
    "timesCited": "127", 
    "universities": "tech univ berlin", 
    "year": "2001"
},{
    "author": "Xue, QZ;Xue, QK;Kuwano, S;Nakayama, K;Sakurai, T", 
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    "paper": "N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin\nfilms on 6H-SiC(000(1)over-bar)", 
    "parentId": null, 
    "timesCited": "5", 
    "universities": "tohoku univ", 
    "year": "2001"
},{
    "author": "Masri, P;Laridjani, MR;Breton, O;Averous, M", 
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    "paper": "Evaluation of SiC as a substrate material for nitride materials\nheteroepitaxy", 
    "parentId": null, 
    "timesCited": "2", 
    "universities": "univ montpellier 2", 
    "year": "2001"
},{
    "author": "Jiang, W;Weber, WJ;Thevuthasan, S", 
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    "paper": "Ion implantation and thermal annealing in silicon carbide and gallium\nnitride", 
    "parentId": null, 
    "timesCited": "4", 
    "universities": null, 
    "year": "2001"
},{
    "author": "Danielsson, E;Zetterling, CM;Ostling, M;Nikolaev, A and\nNikitina, IP;Dmitriev, V", 
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    "paper": "Fabrication and characterization of heterojunction diodes with\nHVPE-Grown GaN on 4H-SiC", 
    "parentId": null, 
    "timesCited": "24", 
    "universities": "ioffe inst", 
    "year": "2001"
},{
    "author": "Ohno, Y;Kuzuhara, M", 
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    "paper": "Application of GaN-based heterojunction FETs for advanced wireless\ncommunication", 
    "parentId": null, 
    "timesCited": "85", 
    "universities": "nec corp ltd", 
    "year": "2001"
},{
    "author": "Ho, AHP;Kwok, DTK;Zeng, XC;Chan, C;Chu, PK", 
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "universities": "rensselaer polytech inst", 
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},{
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    "parentId": null, 
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    "year": "2000"
},{
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},{
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},{
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},{
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},{
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    "universities": "louisiana state univ", 
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},{
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    "paper": "Dry etching and metallization schemes in a GaN/SiC heterojunction device\nprocess", 
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    "timesCited": "5", 
    "universities": "n carolina state univ", 
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},{
    "author": "Kong, HS;Edmond, J;Doverspike, K;Emerson, D;Bulman, G\nand Haberern, K;Dieringer, H;Slater, D", 
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    "universities": "cree res inc", 
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "paper": "Wide bandgap semiconductor materials for high temperature electronics", 
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    "timesCited": "21", 
    "universities": "univ liverpool", 
    "year": "1999"
},{
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    "universities": "n carolina state univ", 
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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C., 1973, BONDS BANDS SEMICOND.\nPICKETT W, 1988, COMPUT PHYS REP, V9, P115.\nPonce FA, 1996, PHILOS MAG A, V74, P777.\nPonce FA, 1996, PHYS REV B, V53, P7473, DOI 10.1103/PhysRevB.53.7473.\nPONCE FA, 1995, APPL PHYS LETT, V67, P410, DOI 10.1063/1.114645.\nPONCE FA, 1994, APPL PHYS LETT, V65, P2302, DOI 10.1063/1.112724.\nRen SY, 1996, APPL PHYS LETT, V69, P251, DOI 10.1063/1.117940.\nRUBIO A, 1993, PHYS REV B, V48, P11810, DOI 10.1103/PhysRevB.48.11810.\nRUBIO A, 1994, PHYS REV B, V49, P1952, DOI 10.1103/PhysRevB.49.1952.\nSALVADOR A, 1995, APPL PHYS LETT, V67, P3322, DOI 10.1063/1.115234.\nSASAKI T, 1988, J APPL PHYS, V64, P4531, DOI 10.1063/1.341281.\nSCHULZ H, 1977, SOLID STATE COMMUN, V23, P815, DOI 10.1016/0038-1098(77)90959-0.\nSHERWIN ME, 1991, J APPL PHYS, V69, P8423, DOI 10.1063/1.347412.\nSITAR Z, 1990, J VAC SCI TECHNOL B, V8, P316, DOI 10.1116/1.585061.\nSTRITE S, 1993, THIN SOLID FILMS, V231, P197, DOI 10.1016/0040-6090(93)90713-Y.\nSTRITE S, 1992, J VAC SCI TECHNOL B, V10, P1237, DOI 10.1116/1.585897.\nSUZUKI M, 1995, PHYS REV B, V52, P8132, DOI 10.1103/PhysRevB.52.8132.\nTANAKA S, 1995, APPL PHYS LETT, V66, P37, DOI 10.1063/1.114173.\nTeles LK, 1996, J APPL PHYS, V80, P6322, DOI 10.1063/1.363710.\nTROULLIER N, 1991, PHYS REV B, V43, P1993, DOI 10.1103/PhysRevB.43.1993.\nVANCAMP PE, 1991, PHYS REV B, V44, P9056, DOI 10.1103/PhysRevB.44.9056.\nWANG MW, 1995, APPL PHYS LETT, V66, P1974, DOI 10.1063/1.113295.\nWANG XS, 1994, PHYS REV B, V49, P4775, DOI 10.1103/PhysRevB.49.4775.\nWei SH, 1996, APPL PHYS LETT, V69, P2719, DOI 10.1063/1.117689.\nWETZEL C, 1994, APPL PHYS LETT, V65, P1033, DOI 10.1063/1.112143.\nWRIGHT AF, 1994, PHYS REV B, V50, P2159, DOI 10.1103/PhysRevB.50.2159.\nYOSHIDA S, 1983, J VAC SCI TECHNOL B, V1, P250, DOI 10.1116/1.582496.", 
    "paper": "Stability and band offsets of polar GaN/SiC(001) and AlN/SiC(001)\ninterfaces", 
    "parentId": null, 
    "timesCited": "37", 
    "universities": "tech univ munich,dept phys,coulombwall,d-85748 garching,germany", 
    "year": "1997"
},{
    "author": "{[}Anonymous]", 
    "citedReferences": null, 
    "paper": "Gallium nitride on silicon carbide blue-emitting laser operates at room\ntemperature", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": null, 
    "year": "1997"
},{
    "author": "Cheng, TS;Foxon, CT;Ren, GB;Orton, JW;Melnik, YV and\nNikitina, IP;Nikolaev, AE;Novikov, SV;Dmitriev, VA", 
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    "paper": "Effects of substrate type on the characteristics of GaN epitaxial films\ngrown by molecular beam epitaxy", 
    "parentId": null, 
    "timesCited": "11", 
    "universities": "univ nottingham,dept phys,univ pk,nottingham ng7 2rd,england", 
    "year": "1997"
},{
    "author": "Davydov, SY;Tikhonov, SK", 
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    "paper": "Photoelasticity and quadratic permittivity of wide-gap semiconductors", 
    "parentId": null, 
    "timesCited": "5", 
    "universities": "russian acad sci,af ioffe physicotech inst,st petersburg 194021,russia.", 
    "year": "1997"
},{
    "author": "Talwar, DN", 
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    "paper": "Phonons in cubic GaN/AlN semiconductor superlattices", 
    "parentId": null, 
    "timesCited": "1", 
    "universities": "indiana univ penn,dept phys,indiana,pa 15705", 
    "year": "1997"
},{
    "author": "Davis, RF;Paisley, MJ;Sitar, Z;Kester, DJ;Ailey, KS and\nLinthicum, K;Rowland, LB;Tanaka, S;Kern, RS", 
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    "paper": "Gas-source molecular beam epitaxy of III-V nitrides", 
    "parentId": null, 
    "timesCited": "20", 
    "universities": "n carolina state univ,dept mat sci \\& engn,box 7907,raleigh,nc 27695", 
    "year": "1997"
},{
    "author": "Zubrilov, AS;Melnik, YV;Tsvetkov, DV;Bugrov, VE and\nNikolaev, AE;Stepanov, SI;Dmitriev, VA", 
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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},{
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    "paper": "Lattice parameters of gallium nitride", 
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},{
    "author": "Davis, RF;Tanaka, S;Rowland, LB;Kern, RS;Sitar, Z and\nAiley, SK;Wang, C", 
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    "paper": "Growth of SiC and III-V nitride thin films via gas-source molecular beam\nepitaxy and their characterization", 
    "parentId": null, 
    "timesCited": "14", 
    "universities": "n carolina state univ,dept mat sci \\& engn,box 7907,raleigh,nc 27695", 
    "year": "1996"
},{
    "author": "Davydov, SY;Tikhonov, SK", 
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    "paper": "Keating-Harrison model for the elastic properties of wide-gap\nsemiconductors", 
    "parentId": null, 
    "timesCited": "7", 
    "universities": "russian acad sci,af ioffe physicotech inst,st petersburg 194021,russia.", 
    "year": "1996"
},{
    "author": "Davydov, SY;Tikhonov, SK", 
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    "parentId": null, 
    "timesCited": "8", 
    "universities": "russian acad sci,af ioffe physicotech inst,st petersburg 194021,russia.", 
    "year": "1996"
},{
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    "paper": "Deformation potential of wide-gap semiconductors", 
    "parentId": null, 
    "timesCited": "1", 
    "universities": "russian acad sci,af ioffe physicotech inst,st petersburg 194021,russia.", 
    "year": "1996"
},{
    "author": "Davydov, SY;Tikhonov, SK", 
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    "paper": "Elastic constants and phonon frequencies of wide-gap semiconductors", 
    "parentId": null, 
    "timesCited": "4", 
    "universities": "russian acad sci,af ioffe physicotech inst,st petersburg 194021,russia.", 
    "year": "1996"
},{
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    "paper": "Magnetic susceptibility of wide-gap semiconductors", 
    "parentId": null, 
    "timesCited": "1", 
    "universities": "af ioffe phys tech inst,politekhnicheskaya 26,st petersburg 194021,russia.", 
    "year": "1996"
},{
    "author": "Pankove, JI;Leksono, M;Chang, SS;Walker, C and\nVanZeghbroeck, B", 
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    "paper": "High-power high-temperature heterobipolar transistor with gallium\nnitride emitter", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "univ colorado", 
    "year": "1996"
},{
    "author": "PORTER, LM;DAVIS, RF", 
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    "paper": "A CRITICAL-REVIEW OF OHMIC AND RECTIFYING CONTACTS FOR SILICON-CARBIDE", 
    "parentId": null, 
    "timesCited": "275", 
    "universities": "n carolina state univ,dept mat sci \\& engn,box 7907,raleigh,nc 27695", 
    "year": "1995"
},{
    "author": "KHO, T;COLLINS, J;ROSNER, DE", 
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    "paper": "DEVELOPMENT, PRELIMINARY TESTING AND FUTURE APPLICATIONS OF A RATIONAL\nCORRELATION FOR THE GRAIN DENSITIES OF VAPOR-DEPOSITED MATERIALS", 
    "parentId": null, 
    "timesCited": "0", 
    "universities": "yale univ,dept chem engn,htcre lab,new haven,ct 06520", 
    "year": "1995"
},{
    "author": "HICKERNELL, FS;HICKERNELL, TS", 
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    "paper": "SURFACE-ACOUSTIC-WAVE CHARACTERIZATION OF PECVD FILMS ON\nGALLIUM-ARSENIDE", 
    "parentId": null, 
    "timesCited": "16", 
    "universities": "motorola inc,govt syst \\& technol grp,scottsdale,az 85252", 
    "year": "1995"
},{
    "author": "LESZCZYNSKI, M;SUSKI, T;PERLIN, P;TEISSEYRE, H;GRZEGORY, I;BOCKOWSKI, M;JUN, J;POROWSKI, S;MAJOR, J", 
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    "parentId": null, 
    "timesCited": "45", 
    "universities": "polish acad sci,high pressure res ctr,ul sokolowska 29-37,pl-01142 warsaw,poland", 
    "year": "1995"
},{
    "author": "ROSSNER, U;BARSKI, A;ROUVIERE, JL;BOURRET, A;MASSIES, J\nand DEPARIS, C;GRANDJEAN, N", 
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    "parentId": null, 
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},{
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    "paper": "DEPOSITION AND CHARACTERIZATION OF DIAMOND, SILICON-CARBIDE AND GALLIUM\nNITRIDE THIN-FILMS", 
    "parentId": null, 
    "timesCited": "45", 
    "universities": "n carolina state univ,dept mat sci \\& engn,pob 7907,raleigh,nc 27695", 
    "year": "1994"
},{
    "author": "LEI, T;LUDWIG, KF;MOUSTAKAS, TD", 
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    "paper": "HETEROEPITAXY, POLYMORPHISM, AND FAULTING IN GAN THIN-FILMS ON SILICON\nAND SAPPHIRE SUBSTRATES", 
    "parentId": null, 
    "timesCited": "193", 
    "universities": "boston univ,dept phys,boston,ma 02215", 
    "year": "1993"
},{
    "author": "DAVIS, RF", 
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A., 1986, Soviet Technical Physics Letters, V12.\nEDMOND JA, 1991, UNPUB 1991 INT SEM D.\nFRANK FC, 1949, PROC R SOC LON SER-A, V198, P205, DOI 10.1098/rspa.1949.0095.\nFREER RF, 1990, ASI SERIES E, V185.\nFRENKLACH M, 1989, J APPL PHYS, V65, P5142, DOI 10.1063/1.343193.\nFUJIMORI N, 1990, DIAMOND BORON NITRID, V162, P56.\nFUJIMORI N, 1986, VACUUM, V36, P99, DOI 10.1016/0042-207X(86)90279-4.\nFUYUKI T, 1989, J CRYST GROWTH, V95, P461, DOI 10.1016/0022-0248(89)90442-9.\nGILDENBLAT GS, 1991, P IEEE, V79, P647, DOI 10.1109/5.90130.\nGILDENBLAT GS, 1988, APPL PHYS LETT, V53, P586, DOI 10.1063/1.99865.\nGILDENBLAT GS, 1990, DIAMOND BORON NITRID, V162, P350.\nGildenblat G. S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), DOI 10.1109/IEDM.1988.32892.\nGLASOW P, 1988, OPTOELECTRONIC TECHN, V868, P40.\nGLASS JT, 1988, HETEROEPITAXY SILICO, V116, P337.\nGROT SA, 1990, IEEE ELECTR DEVICE L, V11, P100, DOI 10.1109/55.46942.\nHARRIS GL, 1988, SPRINGER P PHYSICS, V34.\nHICKS MC, 1989, J APPL PHYS, V65, P2139, DOI 10.1063/1.342864.\nIKEDA M, 1979, J APPL PHYS, V50, P8215, DOI 10.1063/1.325920.\nJOHNSON EO, 1965, RCA REV, V26, P163.\nKEYES RW, 1972, PR INST ELECTR ELECT, V60, P225, DOI 10.1109/PROC.1972.8593.\nKHAN MA, 1991, APPL PHYS LETT, V58, P985.\nKHAN MA, 1991, APPL PHYS LETT, V58, P1515, DOI 10.1063/1.105163.\nKIM HJ, 1987, J ELECTROCHEM SOC, V134, P2269, DOI 10.1149/1.2100869.\nKNIGHT DS, 1989, J MATER RES, V4, P385, DOI 10.1557/JMR.1989.0385.\nKOGA K, 1989, 1989 FALL M EL SOC, P689.\nKONG HS, 1988, J APPL PHYS, V63, P2645, DOI 10.1063/1.341004.\nKONG HS, 1988, J MATER RES, V3, P521, DOI 10.1557/JMR.1988.0521.\nKONG HS, 1989, J MATER RES, V4, P204, DOI 10.1557/JMR.1989.0204.\nKONG HS, 1988, J APPL PHYS, V64, P2672, DOI 10.1063/1.341608.\nKONG HS, 1987, NOVEL REFRACTORY SEM, V97, P233.\nKONG HS, 1986, APPL PHYS LETT, V49, P1074, DOI 10.1063/1.97479.\nKURODA N, 1989, UNPUB 19TH C SOL STA, P227.\nLEI T, 1992, J APPL PHYS, V71, P7145.\nLURIE PG, 1977, SURF SCI, V65, P467.\nMarkov I., 1976, Kristall und Technik, V11, DOI 10.1002/crat.19760110702.\nMATSUNAMI H, 1977, IEEE T ELECTRON DEV, V24, P958, DOI 10.1109/T-ED.1977.18859.\nMatsunami H., 1987, OPTOELECTRON DEVICES, V2, P29.\nMIZUTA M, 1986, JPN J APPL PHYS 2, V25, pL945, DOI 10.1143/JJAP.25.L945.\nMORKOC H, COMMUNICATION.\nNAKAMATSU H, 1987, LASER PARTICLE BEAM, V97, P189.\nNAKAMURA S, 1991, JPN J APPL PHYS 2, V30, pL1705.\nNAKAMURA S, 1991, JPN J APPL PHYS 2, V30, pL1708.\nNAKAMURA S, 1992, JPN J APPL PHYS, V31, P436.\nNAKAMURA S, 1992, JPN J APPL PHYS 2, V31, pL139, DOI 10.1143/JJAP.31.L139.\nNAKAMURA S, 1991, JPN J APPL PHYS 2, V30, pL1998.\nNEMANICH RJ, 1988, J VAC SCI TECHNOL A, V6, P1783, DOI 10.1116/1.575297.\nNISHIMURA K, 1989, UNPUB 1989 SDIO DIAM.\nNUTT SR, 1987, APPL PHYS LETT, V50, P203, DOI 10.1063/1.97661.\nPAISLEY MJ, 1989, J VAC SCI TECHNOL A, V7, P701, DOI 10.1116/1.575869.\nPAN LS, 1989, UNPUB 1989 SDIO DIAM.\nPANCOVE JI, 1990, DIAMOND BORON NITRID, V162, P515.\nPIROUZ P, 1987, APPL PHYS LETT, V50, P221, DOI 10.1063/1.97667.\nPOWELL JA, 1990, APPL PHYS LETT, V56, P1353, DOI 10.1063/1.102512.\nPOWELL JA, 1987, APPL PHYS LETT, V51, P823, DOI 10.1063/1.98824.\nPOWELL JA, 1990, APPL PHYS LETT, V56, P1442, DOI 10.1063/1.102492.\nPOWELL RC, 1990, MATER RES SOC SYMP P, V162, P525.\nSalun V. S., 1987, Soviet Technical Physics Letters, V13.\nSHIBAHARA K, 1986, J CRYST GROWTH, V78, P538, DOI 10.1016/0022-0248(86)90158-2.\nSHIBAHARA K, 1987, JPN J APPL PHYS 2, V26, pL1815.\nSHIOMI H, 1989, JPN J APPL PHYS 2, V28, pL2153.\nSTRONSKI IN, 1938, SITZUNGSBER AKAD MN, V146, P797.\nSUGII T, 1990, J ELECTROCHEM SOC, V137, P989, DOI 10.1149/1.2086593.\nSUZUKI A, 1976, J APPL PHYS, V47, P4546, DOI 10.1063/1.322428.\nTSUKIOKA, COMMUNICATION.\nVerenchikova R. G., 1988, Soviet Technical Physics Letters, V14.\nVolmer M, 1926, Z PHYS CHEM-STOCH VE, V119, P277.\nWADA N, 1980, J NON-CRYST SOLIDS, V35-6, P543, DOI 10.1016/0022-3093(80)90651-1.\nWILLIAMS BE, 1990, J MATER RES, V5, P801, DOI 10.1557/JMR.1990.0801.\nYOSHIDA S, 1983, J VAC SCI TECHNOL B, V1, P250, DOI 10.1116/1.582496.\nYOSHIDA S, 1983, APPL PHYS LETT, V42, P247.\nZHU W, 1991, P IEEE, V79, P621, DOI 10.1109/5.90129.\nZIEGLER G, 1983, IEEE T ELECTRON DEV, V30, P30.", 
    "paper": "DEPOSITION, CHARACTERIZATION, AND DEVICE DEVELOPMENT IN DIAMOND, SILICON-CARBIDE, AND GALLIUM NITRIDE THIN-FILMS", 
    "parentId": null, 
    "timesCited": "44", 
    "universities": "n carolina state univ,dept mat sci \\& engn,raleigh,nc 27607", 
    "year": "1993"
},{
    "author": "DAVIS, RF", 
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    "paper": "THIN-FILMS AND DEVICES OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE", 
    "parentId": null, 
    "timesCited": "127", 
    "universities": "n carolina state univ,dept mat sci \\& engn,raleigh,nc 27607", 
    "year": "1993"
},{
    "author": "EDGAR, JH", 
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    "paper": "PROSPECTS FOR DEVICE IMPLEMENTATION OF WIDE BAND-GAP SEMICONDUCTORS", 
    "parentId": null, 
    "timesCited": "177", 
    "universities": "kansas state univ agr \\& appl sci", 
    "year": "1992"
},{
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    "paper": "CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH\nREGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND\nSILICON-CARBIDE", 
    "parentId": null, 
    "timesCited": "199", 
    "universities": "n carolina state univ,dept mat sci \\& engn,box 7907,raleigh,nc 27695", 
    "year": "1988"
},{
    "author": "WICKENDE.DK;FAULKNER, KR;BRANDER, RW;ISHERWOO.J", 
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    "paper": "GROWTH OF EPITAXIAL LAYERS OF GALLIUM NITRIDE ON SILICON CARBIDE AND\nCORUNDUM SUBSTRATES", 
    "parentId": null, 
    "timesCited": "67", 
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}]