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TCAD improvements #713
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2a addressed in #729 |
I'm interested in helping with this. I'll reach out once I get more bandwidth. |
2c begun addressing in #745 |
There are some @devsim implementations for the TCAD models listed. However, it would require additional work to get them packaged together.
For low current situations, extended precision 128-bit precision is available in devsim. Mesh refinement may be able to help this as well.
A @devsim user has contributed a sample implementation here:
A MOSFET surface mobility model implementation is packaged here:
A mesh refinement approach with respect to 2d simulation and Gmsh is packaged here: Using a commercial mesher (commercial version of Cubit), a refinement strategy was implemented for the devsim_3dmos project above.
1D numerical profiles where used for doping in the devsim_3dmos example above. For analytical profiles, the https://devsim.net/CommandReference.html#devsim.register_function
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Thank you @tcaduser , this is very helpful! I'm currently reworking the meshing because I was not happy with my initial implementation. The goal is to programmatically be able to generate GMSH 3D volumetric meshes (or 2D cross-section) from gdsfactory components (so a GDS) and a gdsfactory layerstack. Then I want it to be easy to pass the various volumes and interfaces to a FEM solver like DEVSIM. Maybe it's something your users over at the DEVSIM forums might find useful when I get it working. |
I am now satisfied with automated 2D meshing, see #826 I have started porting the technique to 3D, and integrating DEVSIM more seamlessly |
closing this feel free to reopen it in https://github.com/gdsfactory/gplugins |
This issue tracks current limitations to TCAD simulations and possible improvements.
The PIN waveguide solver is a good start to combining gdsfactory with semiconductor solvers, and is OK to get order-of-magnitude estimates in a reverse-bias regime where there is little current flowing. However more needs to be done to increase usability:
Currently DEVSIM is used by loading the "simple_physics" from the base package. This only considers constant mobility, and simple SRH recombination. We can make our own modeling:
Until we have a process simulator that can model implantation and annealing, we could get slightly better doping models by assuming distributions (Gaussians, Pearsons) instead of sharp interfaces.
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