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Improve transistor definitions in xschem lvs export #102
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/cc @atorkmabrains FYI |
@@ -33,7 +33,7 @@ L 4 0 -10 20 -30 {} | |||
B 5 17.5 -32.5 22.5 -27.5 {name=C dir=inout pinnumber=3} | |||
B 5 -22.5 -2.5 -17.5 2.5 {name=B dir=in pinnumber=1} | |||
B 5 17.5 27.5 22.5 32.5 {name=E dir=inout pinnumber=2} | |||
B 5 17.5 -2.5 22.5 2.5 {name=B dir=in pinnumber=1} | |||
B 5 17.5 -2.5 22.5 2.5 {name=S dir=in pinnumber=1} |
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@StefanSchippers is this change related?
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The latter one fixes a wrong pin in the vnpn transistor. It has the substrate pin incorrectly named as the base (B) pin, making base and substrate shorted.
The fix renamed the substrate pin from 'B' to 'S'
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Make sense, updating the PR so that it makes it clearer that it fixes both before merging.
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Just a nit.
@StefanSchippers Could you please make sure to add a similar PR on: https://github.com/efabless/globalfoundries-pdk-libs-gf180mcu_fd_pr |
Done here: efabless#23 |
@StefanSchippers can |
If you add an |
Yes, I went for |
Adding moscap labels option
(Still to be decided if we want to make similar changes for LVS on other devices (moscap and others)
Fixes #101