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JP-3365: Increase MOS cutout margin #7976
JP-3365: Increase MOS cutout margin #7976
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Codecov ReportAll modified lines are covered by tests ✅
📢 Thoughts on this report? Let us know!. |
Started a regression test run against the PR branch at https://plwishmaster.stsci.edu:8081/job/RT/job/JWST-Developers-Pull-Requests/977 Expecting small differences in results for any MOS processing. |
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Code updates are simple enough. Will wait for regtests to finish before final approval.
Regression test results show a few unrelated failures (cause is known) and many expected differences in all MOS products beyond the stage where extract_2d has been run to extract individual slitlets. All cal, s2d, and other intermediate level-2b products show differences in the extraction region size, almost always an extra 4 pixels in the cross-dispersion direction (2 on top and bottom?), all of which seems reasonable. 1D extractions also show small differences due to inclusion of new edge pixel values. So I think this looks OK. |
Resolves JP-3365
Closes #7877
This PR addresses edge effects in resampling MOS slit cutouts by adding a couple extra pixels of WCS coverage at the top and bottom of each slit.
Checklist for maintainers
CHANGES.rst
within the relevant release sectionHow to run regression tests on a PR