This Repository includes the group coursework files and reports of the subject Advanced Electronic Devices. The software used for these projects was Synopsis Sentaurus TCAD.
Authors:
Dimitris Antoniadis
Marios Constantinou
Josh Laney
Pelayo Ramirez
Coursework 1:
Abstract - MOSFET performance parameters are introduced and used in theoretical analysis of short channel effects. Possible optimizations of these effects are then introduced. The theory is then applied in TCAD simulations of a short channel Silicon MOSFET with a gate length of 225nm and performance is compared to that of a device with a 1000nm gate length. Optimizations yield improvements in all performance parameters when compared to the unoptimized short channel device. A DIBL of 6.84 mV/V at a threshold voltage of 0.48V, and a subthreshold swing of 62.77mV/Dec. Improvement is also seen when compared to the long channel in all areas except for output conductance, which remains largely unaffected by the optimizations applied.
Coursework 2:
Abstract—Nano-wire GAAFET of 8nm radius are studied with both Ohmic and Schottky contacts, and with and without self heating effects. An additional novel CIGAAFET with Ohmic contacts is also explored. Despite a series of simulation difficulties, the performance of these devices are extracted, and analysed. The CIGAAFET is found to produce a maximum Ion=Ioff = 1.68E + 09. Self heating effects were found to cause a current reduction of 11% − 12% in devices with Ohmic contacts, with minimal impact on the Schottky device. In all cases, the GAAFET is shown to be an effective solution for achieving acceptable performance at this scale, despite the additional non-idealities the device presents.