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Quantum Corrections to Drift Diffusion simulation
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python_packages | ||
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2dresult.pdf | ||
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Electrons_1.5nm.pdf | ||
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Electrons_3nm.pdf | ||
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Holes_1.5nm.pdf | ||
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Holes_3nm.pdf | ||
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LICENSE | ||
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README | ||
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dg_common.py | ||
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dg_physics.py | ||
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model_create.py | ||
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moscap.py | ||
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moscap2d.geo | ||
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moscap2d.msh | ||
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moscap2d.py | ||
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moscap2d.tec | ||
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moscap2d_devsim.msh | ||
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myresult.tec | ||
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ramp.py | ||
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runs.sh | ||
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test_1d.py | ||
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test_2d.py | ||
README
These implement the Density Gradient method in a way similar to this paper:
@ARTICLE{WettsteinVLSI2002,
author={Andreas Wettstein and Oleg Penzin and Eugeny Lyumkis},
title={Integration of the Density Gradient Model into a General Purpose Device Simulator},
journal={VLSI Design},
volume={15},
number={4},
pages={751--759},
year={2002},
doi={10.1080/1065514021000012363},
}
With the insulator boundary condition described in:
@ARTICLE{GarciaAsenov2011,
author={Garcia-Loureiro, A.J. and Seoane, N. and Aldegunde, M. and Valin, R. and Asenov, A. and Martinez, A. and Kalna, K.},
journal=ieeetcad,
title={Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors},
year={2011},
month=jun,
volume={30},
number={6},
pages={841--851},
doi={10.1109/TCAD.2011.2107990},
ISSN={0278-0070},}
test_1D.py
1D simulation plots
runs.sh
Runs 1D plots for different doping and oxide thicknesses
moscap2d.geo
3nm tox from gmsh
test_2d.py
2d example