v2.13.0.dev1

What's Changed

Added

• Added EMEModeSolverMonitor.direction, EMESimulationData.port_modes_backward and directional basis conversion for EME cells with distinct forward and backward modes.
• For EME results with port_modes_backward, smatrix_in_basis requires paired forward/backward bases per changed port, while field_in_basis also accepts a basis matching the excitation direction; these conversions require tidy3d-extras and an EME license.
• CurrentBC now drives charge contacts by total terminal current and solves their potentials, with support for multiple current-driven contacts, ohmic and Schottky contacts, and one swept DCCurrentSource.current on the accelerated charge solver.
• Current-driven contacts support small-signal analysis as open circuits, except isolated zero-current contacts, which must be the only current-driven contact and warn that their potential depends on the initial state.
• An ohmic CurrentBC may share a placement with SurfaceRecombinationBC or reach a heterojunction, but cannot do both; a nonzero current on a contact with no path to another contact is rejected.
• Current-sweep results are indexed by the solved potential of the swept contact.
• Added loss current density Jx_loss/Jy_loss/Jz_loss on FieldStructureData and colocate_loss_current_density(...) to place the components on common coordinates.
• Added ProtectedDopingRef for hosted charge simulations with surrogate-only local previews and encrypted doping profiles carried in HDF5; optical simulations and mode calculations ignore these references.
• Hosted charge runs with ProtectedDopingRef require the accelerated solver and at least two voltage points, allow only whole-domain SteadyCapacitanceMonitor recording, and omit solver logs and residual/CFL traces.
• Added SimulationData.specific_absorption_rate(...) and specific_absorption_rate_from_densities(...) for point SAR in W/kg using a FieldStructureMonitor and material mass densities.
• SAR calculations require mass densities for absorbing media, supplied by their heat media or explicitly in kg/um^3; 2D materials, lumped elements and automatic PEC frames contribute zero.
• Added ProtectedOpticalMediumRef for hosted FDTD and ModeSimulation with surrogate-only local previews and encrypted HDF5 payloads; JSON/YAML contain placeholders, and local solving, adjoint workflows and result renormalization are unsupported.
• Added SurfaceFieldStructureMonitor and SurfaceFieldStructureData for surface fields and electromagnetic surface-loss density on PEC and lossy-metal structures, including symmetry and overlap with 2D materials, lumped elements and automatic PEC frames.
• Added SimulationData.per_structure_loss(...) for surface and volumetric electromagnetic losses by structure in 3D; supply the corresponding monitors at matching frequencies, with unsampled losses reported as NaN.
• Added ModeStructureMonitor, ModeStructureData and ModeSimulationData.field_structure(...), optical_generation(...) and per_component_optical_generation(...) for structure-resolved mode optical generation; the monitor requires colocate=False and all three electric-field components.
• Added experimental meshing for 3D heat, charge and conduction simulations through mesher="experimental" on unstructured grid specifications; AutoUnstructuredGrid is unsupported.
• The TriangleMesh constructors from_stl, from_trimesh, from_triangles, from_vertices_faces, from_height_grid and from_height_function take remove_degenerate_faces to remove near-zero-area triangles before building the mesh.
• Added automatic differentiation for GeometryArray base-geometry parameters, instance offsets and invertible instance transforms, and for geometry parameters and invertible affine matrices in Transformed.
• Added autograd support for PolySlab.bulges, and for vertices and slab_bounds of arc-containing PolySlabs, when sidewall_angle=0 and dilation=0.
• Added LombardiSurfaceDependence through CaugheyThomasMobility.surface_dependence and MasettiMobility.surface_dependence for accelerated charge simulations; these models now serialize the field, so new files do not load in older clients.
• Added TransferredElectronFieldDependence, a high-field mobility model with the negative differential mobility of direct-gap III-V semiconductors, driven by the electric field or the quasi-Fermi gradient and selectable through field_dependence alongside CanaliFieldDependence (accelerated charge solver only).
• Added autograd gradients for supported ThinLensBeam parameters and ThinLensOverlapMonitor amplitudes in fixed homogeneous, isotropic, lossless plane media.
• Added AlloyMobility, the low-field mobility of a III-V alloy harmonically interpolated between two CaugheyThomasMobility end members by mole fraction, with an optional alloy-scattering term (accelerated charge solver only).
• Added temperature-dependent thermal conductivity and heat capacity on SolidMedium, including anisotropic conductivity and InversePolynomialConductivity.from_resistivity(...) for thermal-resistivity fits.
• Temperature-dependent thermal properties support heat simulations with conduction heat sources and accelerated self-heating charge simulations; models are clamped to temperature_range, and heat capacity has no effect in steady charge analyses.
• SteadyGenerationRecombinationData now reports active shockley_reed_hall, auger, radiative, band_to_band_tunneling and distributed_generation rates alongside impact_ionization, summing to net_recombination.
• Added quasi-Fermi-gradient-driven velocity saturation through CanaliFieldDependence.driving_force and reference_density on the accelerated charge solver; the default remains "electric_field", and quasi-Fermi-driven DC solves may take up to twice as long.
• CanaliFieldDependence now serializes driving_force, so files written by this version do not load in older clients.
• Added HeterojunctionSurfaceShockleyReedHallRecombination and HeterojunctionCaptureSide for interface-trap recombination at a heterojunction, with per-side capture velocities.
• Added LVSRunner and LVSResults to the KLayout plugin for running KLayout's layout versus schematic (LVS) checks and loading their results.
• Added Simulation.check_ports_reach_pml() to identify mode ports whose connected structures do not span the absorbing layer, accounting for extrusion and grouped or unioned geometries.
• Set config.validation.check_ports_reach_pml=True for pre-upload mode-port warnings in full validation; warnings are disabled by default and skipped in fast mode, while the helper remains callable in any validation mode.
• Added second-order subpixel-smoothed projection through smoothed_projection(..., order=2) and projection="ssp2" in autograd and inverse-design filter-and-project helpers.
• Filter-and-project helpers also accept projection="ssp1" and periodic SSP derivatives with padding="wrap"; the design plugin requires 2D grids with equal physical cell spacing.
• Added AnisotropicPermittivity for charge media on the accelerated solver, with principal values and rotation or from_components(...) tensor construction and plotting of global-frame components.
• For strongly anisotropic charge permittivity, linear_solver="direct" is recommended; conduction simulations still require scalar permittivity.
• The accelerated charge solver warns when the MasettiMobility formula is not positive at some nodes for the local temperature and doping, where it sets the mobility to zero.
• Added FieldStructureTimeMonitor and FieldStructureTimeData for time-domain fields, static-conductivity loss current and power density, and instantaneous per-structure loss through SimulationData.per_structure_loss(...).
• Time-domain loss reports NaN with a warning for lossy dispersive or nonlinear media and for surface-impedance metals without surface-loss recording; fully anisotropic and time-modulated media are unsupported.
• Added record_in_pml=False to field, medium, permittivity, flux and field-projection monitors to exclude PML/absorber layers from recordings and integration surfaces; the default is True, and the option is unavailable in EMESimulation and ModeSimulation.
• On the accelerated charge solver, a self-heating charge simulation now accepts AnisotropicConductivity, RadiationBC, a ConvectionBC with a positive emissivity, ThermalContactResistance except between two semiconductors or on a conductor, and SolidMedium.velocity except on a semiconductor.
• Added company shared workspace selection through config.workspace.default and helpers to move or duplicate tasks, list workspaces and members, and inspect activity; private remains the default workspace.
• Simulation accepts LumpedVoltageSource, the ideal voltage source FlexRF provides, and before upload rejects one that cannot set its voltage where the grid places it.
• Added bh_strategy, velocity_clamp and init_velocity to tidy3d.plugins.design.MethodParticleSwarm, exposing the pyswarms boundary handling, velocity clamp and initial swarm velocities.
• Added ChargeToleranceSpec.linear_rel_tol, the factor by which the iterative linear solver reduces the residual of the linear system at each nonlinear iteration of a charge simulation (default 1e-2).
• Log remote simulation cache hits when verbose=True and correctly report their zero cost.
• SurfaceFieldTimeMonitor now accepts sampling_dt and num_samples to set its recording cadence in physical time or as a sample count, like FieldTimeMonitor and FluxTimeMonitor.
• With the accelerated charge solver, SelberherrImpactIonization(formulation="GradQuasiFermi") now also runs with self-heating and prescribed-temperature analyses (SteadyChargeDCAnalysis, SSACAnalysis), evaluating the quasi-Fermi levels at the local lattice temperature.
• Added incomplete dopant ionization through SemiconductorMedium.donor_ionization and acceptor_ionization, with PearsonBardeenIonization, AltermattSchenkIonization, MultiSiteIonization and SteadyDopingMonitor on the accelerated charge solver.
• Incomplete-ionization capacitance includes carriers bound to dopants, and SlotboomBandGapNarrowing preserves its fitted equilibrium minority-carrier density; media without an ionization model are unchanged.
• Added DeviceCharacteristics.ac_photocurrent_voltage, ac_admittance_voltage and ac_capacitance_voltage for accelerated charge small-signal analyses, reporting the response at the SSACVoltageSource contact versus bias and frequency.
• With DistributedGeneration, ac_photocurrent_voltage reports short-circuit photocurrent per unit generation-modulation depth for photodetector responsivity and transit-limited bandwidth calculations.
• Added Pockels and DC Kerr electro-optic perturbations through ElectroOpticPerturbation and PerturbationAnisotropicMedium, using perturbed_mediums_copy(electric_field=...); only diagonal impermeability changes in simulation coordinates are applied.

Changed

• When passing field_dependence as a dictionary to a mobility model, include "type": "CanaliFieldDependence" or "type": "TransferredElectronFieldDependence"; passing model objects and loading saved simulations are unaffected.
• When passing SurfaceRecombinationBC.model as a dictionary, include "type": "SurfaceShockleyReedHallRecombination" or "type": "HeterojunctionSurfaceShockleyReedHallRecombination"; passing model objects and loading saved simulations are unaffected.
• On EME results without backward port modes, smatrix_in_basis and field_in_basis now reject a single backward basis; local EME requires forward mode data and rejects cells with non-diagonal FullyAnisotropicMedium, which should be run on the server.
• SemiconductorMedium materials whose N_c, N_v, E_g and electron_affinity agree within a 1e-12 relative tolerance, including ones that differ only in attrs or in the form of an equal effective DOS, now meet as a same-material junction, which accepts SurfaceShockleyReedHallRecombination and has no thermionic emission.
• A self-heating SteadyChargeDCAnalysis or SSACAnalysis no longer requires a TemperatureMonitor, and warns when no TemperatureBC or ConvectionBC removes the heat or a semiconductor has no heat medium.
• Sped up autograd tracer detection for models containing large numeric data arrays.
• Updated EME FlexCredit, runtime, memory and storage estimates for anisotropic cells requiring distinct forward and backward modes, including frequency interpolation.
• CurrentBC.source now specifies total terminal current in amperes, or amperes per micron of device depth in 2D, and symmetry applies to the whole-device current rather than a manually reduced current.
• An isothermal or prescribed-temperature charge analysis now warns about heat boundary conditions and heat sources, which it never applied.
• Sped up loading individual monitors from large result files.
• Rejected symmetry along the zero-size axis of a 2D HeatChargeSimulation, which the solvers could not mesh.
• A charge simulation now rejects a semiconductor whose electron and hole mobility models are of different types, which the solver refused only after submission.
• On the accelerated charge solver, a missing electron_affinity that decides the band offset between two semiconductors now warns.
• A SemiconductorMedium.R that lists a mechanism twice, except DistributedGeneration, now warns that only one entry is used.
• Multifrequency diffraction objectives in periodic simulations can now share adjoint runs when their in-plane wavevectors match.
• Reduced Tidy3D import time, including in the web GUI.
• Sped up autograd gradient computation and reduced its peak memory for CustomMedium gradients.
• Sped up structure plots (plot, plot_eps, and heat/charge property plots) for scenes with many structures or large GeometryGroups.
• HeatChargeSimulation warns when all its contact entries name one metal structure with one source, since the charge simulation then has a single terminal.
• FieldStructureMonitor now supports overlap with 2D materials, lumped elements and automatic PEC frames; lumped elements and PEC frames use structure_index=-2.
• A self-heating charge simulation now warns that the heat medium of a ChargeConductorMedium is not used, since conductors take no part in its heat solve.
• Medium2D.volumetric_equivalent now returns Medium for constant-conductivity components, reducing time-stepping cost for lumped resistors, parallel RC networks and conductive 2D sheets without unnecessary pole-residue terms.
• With the accelerated charge solver, HeatChargeSimulation now warns when two SemiconductorMedium media that may meet have the same N_c, N_v, E_g and electron_affinity but a different delta_E_g, a difference that acts as a voltage source where they meet.
• Baseband source times now derive their characteristic frequency and frequency_range() from their fastest 10%-to-90% transition, so automatic grids without a wavelength resolve the transitions and mode sources solve at that frequency; the new optional freq0 sets the frequency explicitly and is needed for steeply angled plane waves.
• Sped up PolySlab.inside for polygon slabs with a slanted sidewall (sidewall_angle != 0).
• Avoided loading web dependencies when importing tidy3d.plugins.dispersion.

Fixed

• Fixed EME mode matching, backward propagation and port-mode normalization for non-diagonal FullyAnisotropicMedium and anisotropic bends with bend_medium_frame="global", keeping lossy port modes consistent with the S-matrix basis.
• Fixed overestimated gradients with respect to uniform medium parameters for structures crossing a periodic or Bloch boundary.
• On the accelerated charge solver, a doping box that ends on a contact or on a boundary of a semiconductor now dopes the nodes on that boundary, which rounding of the box bounds could leave undoped and turn an ohmic contact into a barrier.
• Fixed the electric field and current density of 2D charge simulations with use_accelerated_solver=True in the xz or yz plane, which dropped their z component.
• HeatChargeSimulation accepts a swept or SSAC-driven metal named by several boundary_spec entries with the same source on the accelerated charge solver.
• Corrected the sign of DeviceCharacteristics.steady_dc_electron_capacitance to match SteadyCapacitanceData.electron_capacitance, making both electron and hole capacitances positive in reverse bias.
• Scene.plot_eps and Scene.eps_bounds now plot static permittivity for charge-only MultiPhysicsMedium.
• Corrected complex-output gradients in the PyTorch wrapper.
• Fixed conversions between lossless CustomMedium and CustomPoleResidue models when conductivity is absent.
• Included custom-pulse delays in automatic simulation run times.
• Fixed EMECoefficientMonitor n_complex and flux data being stored under the wrong mode index in cells that drop an invalid mode, which also made EMECoefficientDataset.normalized_copy scale A and B by another mode's flux.
• Fixed the frequency scaling of gradients with respect to the imaginary part of a CustomMedium.eps_dataset for objectives at several frequencies.
• In a 2D charge simulation on the accelerated charge solver, doping boxes and CustomDoping or DistributedGeneration data that are finite along the out-of-plane axis are now taken at the simulation plane instead of losing a mesh-dependent part of the doping or generation.
• Fixed DeviceCharacteristics to report whole-device results for charge simulations with symmetry and use_accelerated_solver=True.
• Corrected the docs of ChargeToleranceSpec.rel_tol, the 2D steady_dc_resistance_voltage depth conversion and the HurkxDirectBandToBandTunneling example.
• Charge simulations now reject before upload Cartesian TemperatureMonitor recording and Cartesian SteadyPotentialMonitor recording in 2D or bias sweeps, preventing failed solves and incorrect recorded fields.
• plot_structures_eps with scale="symlog" and automatic limits no longer raises when the minimum permittivity is negative.
• Fixed autograd filters to preserve complex convolution results and constant-padding Gaussian-filter gradients, and to handle one-pixel conic filters and per-axis kernel sizes on inputs with singleton dimensions.
• Preserved allow_gain when converting between diagonal and fully anisotropic media.
• Avoided numerical cancellation when computing Gaussian pulse widths for narrow frequency ranges.
• An InsulatingBC that covers a contact face no longer replaces the contact, whatever the order of boundary_spec, unless its placement names the contact's metal.
• Fixed the SteadyCapacitanceData documentation to describe the central difference the capacitance uses.
• Fixed conductivity-axis resolution in fully anisotropic media with repeated principal permittivities.
• Fixed resonance analysis accepting mismatched sampling intervals by comparing time steps with a relative tolerance.
• A contact placed with StructureStructureInterface on one of several structures of one semiconductor medium no longer splits that medium at the faces between those structures, which with impact ionization could stop a sweep from converging.
• Preserved pixel positions and gradients in ramp projections.
• Fixed plotting of fully anisotropic media with principal permittivities or passive conductivities accepted within numerical tolerance.
• Fixed the potential reference on the accelerated charge solver to follow VoltageBC: the background semiconductor's electron affinity, otherwise that of the lowest-priority semiconductor structure.
• Preserved supplied medium settings in Lorentz.from_nk when the extinction coefficient is zero.
• The GaussianDoping documentation now gives the concentration at box edges and corners, and in a box thinner than twice width the plotted doping and the legacy charge solver now use the same profile as the accelerated charge solver.
• Preserved coordinates of singleton charge samples while accepting unlabeled singleton arrays in custom charge perturbations.
• Fixed BacktrackingSafeUpdate recovery for parameter arrays with different memory layouts.
• Fixed IndexPerturbation.from_perturbation_delta_model to evaluate delta values at the model reference frequency.
• Corrected the complex phase shown in perturbation plots.
• Preserved negative real permittivity in DispersionFitter.from_complex_permittivity when the imaginary part is omitted.
• Fixed optical permittivity queries, local mode solves and conductor-priority handling for MultiPhysicsMedium by using its optical component.
• MultiPhysicsMedium optical queries now report a missing optical field, and wrapping Medium2D is rejected at validation.
• Fixed zero PolySlab.slab_bounds gradients in two-dimensional simulations when the slice coordinate cannot be represented exactly in single precision.
• Fixed crashes in PolySlab geometry queries and plotting when its fields are traced by autograd; side-plane and tilted-plane intersections of a traced PolySlab now raise a clear error instead.
• Corrected temporal normalization of adjoint gradients for beam and custom field/current source parameters, including source bandwidth and forward normalization settings.
• Fixed MasettiMobility validation to check the high-doping asymptote at 300 K and the heat-boundary temperatures when the lattice temperature is solved for or not prescribed, instead of skipping the check.
• Fixed adjoint gradients for PolySlab.slab_bounds and axial Cylinder.center/length with a nonzero sidewall_angle.
• Fixed loading results without a solver log.
• Fixed Simulation.to_gdstk, to_gds and to_gds_file exports of structures extending infinitely across the export plane, including custom media, by clipping them to simulation bounds.
• Non-isothermal charge simulations now reject solids without a charge medium before upload; use ChargeInsulatorMedium(permittivity=...) for insulating solids, including the background, while isothermal charge simulations are unaffected.
• Fixed simulation PML warnings so each structure bound is checked against the boundary condition and PML thickness for its own axis and side.
• HeatChargeSimulation now logs each linear_solver='direct' warning once, instead of on every validation, so parameter sweeps and Batch runs no longer repeat it for every simulation.
• Fixed spurious growing modes in lossless mode solves, including magnetic-wall symmetry, and corrected normalization and orthogonalization weights at boundary cells and single-cell invariant axes.
• Fixed incorrect autograd gradients for FieldMonitor objectives in simulations with symmetry, including point monitors when config.adjoint.parallel_run is enabled.
• Fixed import-order-dependent failures with model subclasses, including inverse-design metrics.
• Fixed single-bias charge field monitors to use the same voltage coordinate as device_characteristics, including when a grounded contact is listed first.
• Fixed HeatChargeSimulation.plot and plot_boundaries boundary-condition plots for overlapping structures, multipart regions and holes; simulation results are unaffected.
• The Schottky barrier check on a VarshniEnergyBandGap semiconductor now uses the contact's lattice temperature, or the coldest heat-sink temperature in a self-heating run, instead of twice the simulation temperature.
• Fixed ohmic and Schottky contact voltage offsets with band-gap narrowing in accelerated charge simulations, shifting potential and energy-band outputs by up to half the local narrowing and potentially changing flat-band and breakdown voltages.
• Charge simulations combining SlotboomBandGapNarrowing with fermi_dirac=True no longer count carrier degeneracy twice, which changes results in regions doped above about 1e19 cm^-3.
• Broadband PlaneWave sources with a fixed in-plane wave vector (FixedInPlaneKSpec) in a dispersive background medium now inject the same in-plane wave vector at every frequency, the one their Bloch boundaries are set from.
• Corrected PolySlab vertex gradients in two-dimensional simulations and for nonzero dilation or sidewall_angle, including PEC cross-sections.
• Optical homogeneity checks for sources, monitors, field projection, and automatic absorbing boundaries ignore medium names and user attributes when the optical models match.
• Fixed local subpixel mode simulation results to use public Tidy3D data classes, allowing current and voltage integrals to accept the returned modes.
• Fixed FieldProjector.from_near_field_data projections from monitors extending into PML, including infinite monitors and windowed projections with use_colocated_integration=False.
• Fixed the accelerated charge solver giving the wrong current where two SemiconductorMedium media with the same band parameters and delta_E_g but different doping meet, such as separate n- and p-doped silicon media with SlotboomBandGapNarrowing.
• Fixed adjoint shape gradients next to acute or curved geometry edges, where the inside or outside permittivity was sampled on the wrong side of the adjacent face.
• DiffractionData.amps and DiffractionData.power now report zero for a diffraction order at frequencies where it is evanescent, and new runs also store zero diffraction fields there.
• Corrected shape gradients for PEC, PEC2D and surface-impedance lossy metals, including cutouts, dielectric contacts, uniform reciprocal anisotropic surroundings and two-dimensional simulations.
• Adjoint setup now warns when nearby metal, strongly curved surfaces, sources, monitors or unsupported surrounding media can reduce metal shape-gradient accuracy.
• Metal shape-gradient calculations now raise AdjointError before allocating data beyond config.adjoint.memory_allotment_fraction of available memory.
• Fixed SelberherrImpactIonization keeping the accelerated charge solver from converging at biases where the device current is negligible, such as a diode near 0 V or at low reverse bias, most often with the default formulation="PQ"; the generation-recombination monitor reports zero impact-ionization generation where both carrier currents are below numerical resolution.
• DiffractionMonitor amplitudes of nonzero orders no longer carry a grid-dependent phase error (about pi * m / N for order m with N cells per period).
• Fixed accelerated charge DC sweeps into strong inversion stopping short of thermal equilibrium, including MOS capacitors with no minority-carrier contact.
• Isothermal equilibrium sweeps without generation, tunneling or impact ionization now converge more quickly when contacts on connected semiconductor structures share one voltage, including on fine interface meshes.
• Fixed EMESimulation raising a generic size error instead of the port_offsets error when the two port_offsets add up to more than size along axis; the error now reports the offsets, their sum, and the size.
• Fixed AutoGrid failing with "AutoGrid coordinates ... do not match the simulation domain" when a snapping point lies on or within dl_min of a simulation edge, a structure extends past that edge, and unshadowed mesh overrides are present, as with LayerRefinementSpec corner refinement.
• Logging from several threads at once, as Batch uploads do, no longer fails intermittently inside the logger or mixes warning consolidation, capture or output suppression between threads.
• Corrected cSi material-library variant Si_MultiPhysics electron mobility from 1471 to 1417 cm²/V/s, reducing lightly doped values by up to 3.7%; set mobility_n.mu=1471.0 to reproduce previous results.
• Fixed PerturbationMedium.perturbed_copy dropping the base conductivity of a lossy medium when its heat or charge perturbation changes only the permittivity, which made the perturbed medium lossless.
• Fixed ComplexPolySlab.inside misclassifying points at heights where the offset polygon self-intersects.
• Status checks, cost estimation, and monitoring of a blocked RF component modeler task now raise a WebError containing the server's block message.

Breaking Changes

• CurrentBC is no longer accepted in conduction simulations, on the non-accelerated charge solver, or on contacts touching only insulators.
• Constructing BroadbandPulse now requires the tidy3d-extras package, including when the pulse is not yet attached to a source.
• ChargeInsulatorMedium, ChargeConductorMedium and SemiconductorMedium no longer provide optical methods such as eps_model; read static permittivity instead and use MultiPhysicsMedium(optical=..., charge=...) for optical simulations.
• Charge media no longer accept heat_spec or optical settings (frequency_range, allow_gain, nonlinear_spec, modulation_spec); use MultiPhysicsMedium(heat=..., charge=...) for thermal coupling, while loaded legacy optical settings warn and are ignored.
• A TriangleMesh with near-zero-area triangles now fails validation instead of having those triangles removed automatically; pass remove_degenerate_faces=True to the constructor that builds it, such as TriangleMesh.from_stl or TriangleMesh.from_triangles, to remove them.
• NumericalStructureConfig.compute_derivatives no longer receives derivative_helper; the derivatives it needs are now declared as NumericalDerivativeQuery entries in derivative_queries and passed to it as query_results.
• PointCloudFieldMonitor, PointCloudPermittivityMonitor and DipoleEmissionMonitor are no longer Box subclasses; center, size and bounds are read-only and come from the bounding box of points.

Full Changelog: v2.13.0.dev0...v2.13.0.dev1