Skip to content

ma N 2405 ~0.5um

tgustafson-ntnu edited this page Apr 1, 2025 · 1 revision

by Erik Palesch (erikpalesch@gmail.com)


  1. Spin coat ma-N 2405 (0.5 μm)

     3000 RPM for 33 s
     Ramp: 1000 RPM/s for 3 s  
    
  2. Soft bake

     90 °C for 90 s 
    
  3. Exposure

     Features: Areas
     HV: 100 kV
     Current: 500 pA
     Dose: 700 μC/cm^2
    
  4. Post-exposure bake

     None.
    
  5. Develop

     ma-D 525 for ~ 60 s (gently agitating from side to side in two orthogonal directions)
     Rinse in DI water for 30 s
     Dry with N2(g)
    

This process was done on STS Elionix EBL system. It should work for areas from 100 nm to 1 um in dimension. Use the Beamer SW or another one with PEC to obtain good results when working with many objects close to each other. Very clean sample required, o-zone cleaning should follow after solvent cleaning. Use at least 600 ul for spin-coating of 2 inch wafer. Clean the backside of the wafer with swab soaked in suitable solvent if there is remaining resist.

Would you like to contribute?

Use one of the templates below (requires a GitHub account) or submit your process to us at nanolab@ntnu.no.

New lithography protocol

New etch protocol

Other protocol


Please send us feedback!

Clone this wiki locally